Double-gate small band gap semiconductor transistor and preparation method thereof

Abstract

The invention provides a double-gate small band gap semiconductor transistor and a preparation method thereof. The power supply voltage is fed back to an auxiliary gate, therefore, a clamped square barrier is formed near a drain end, so that the reverse tunneling of drain end minority carrier can be suppressed well when working under a large bias voltage, at the same time, the voltage of the powersupply end ensures the on state of the drain end under a small bias voltage, the forward conduction barrier is reduced, the good on state can be ensured while the bipolarity of an undoped small bandgap semiconductor top gate device is significantly suppressed, while the switching ratio is increased and the power consumption is reduced, the high performance of the device and the circuit is maintained, at the same time, no additional operating power supply is added to the circuit, and the double-gate small band gap semiconductor transistor is applied to an ultra-large scale integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of semiconductor circuits, and in particular relates to a high-performance and low-power consumption double-gate small-bandgap semiconductor transistor and a preparation method thereof. Background technique [0002] Small bandgap semiconductor materials have great potential in the field of high-speed integrated circuits. For example, new nanomaterials such as carbon nanotubes and graphene nanobelts also have good application prospects in flexible electronics and display drive circuits. Indium antimonide , Indium Arsenide and other traditional small bandgap materials are widely used in high-speed radio frequency field. However, for general undoped (Doping-free) small bandgap semiconductor top-gate transistors, they usually have a small switching ratio, especially under large source-drain bias voltage, the source terminal is multiplied by the gate voltage. At the same time that the potential barrier of the dr...

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Problems solved by technology

[0003] At present, there are mainly two methods that can be realized: the first one is to add an auxiliary gate at the drain end and connect it to the drain end to change the shape of the drain end barrier. When , the multi-sub-barrier at the drain terminal is obvious. Even if the voltage of the main gate is modulated above the threshold voltage, the current of the device is still very small, which will lead to serious loss of circuit level, waveform distortion, and even logic errors in the circuit built with this device; The other is to apply a variable voltage on the auxiliary gate electrode. In the open state, the drain terminal barrier is formed to suppress reverse tunneling, and the multi-sub barrier is lowered at low voltage to ensure that the current will not decrease. However, this method It will increase the independent power supply, greatly increase the process complexity in the circuit, but will increase the power consumption, and it is difficult to apply. Therefore, it is necessary to invent a method that can suppress bipolarity and ensure the high performance of the device and the circuit. In addition, devices and methods for increasing the power supply are imminent

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