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Fumed silica and production method therefor

A fumed silica, chemical mechanical technology, applied in the direction of silica, silicon oxide, chemical instruments and methods, etc.

Inactive Publication Date: 2019-08-23
TOKUYAMA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the above reasons, it can be considered that there are still unresolved issues with regard to the accuracy of the coarse grain amount obtained by the evaluation

Method used

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  • Fumed silica and production method therefor

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preparation example Construction

[0039] The preparation method of fumed silica in this embodiment is not particularly limited, and any preparation method of silica microparticles can be used, as long as the BET specific surface area of ​​the prepared silica microparticles is 57m 2 / g above 400m 2 / g or less, and the residual amount on the sieve obtained by using an electroforming sieve with a mesh size of 5 μm and performing a wet sieving method is less than 5 ppm. Specifically, for example, there is a method of supplying a silane compound to a reactor, burning it in a flame, or hydrolyzing it. For example, you can refer to Japanese Patent Publication No. 47-46274, Japanese Patent Publication No. 58-54085, Japanese Patent Application Publication No. 59-169922, Japanese Patent Application Publication No. 59-184721, and Japanese Patent Application Publication No. 60-011218. The methods described in each gazette.

[0040] Fumed silica is produced by supplying a source gas containing a silane compound to a flam...

Embodiment 1 to Embodiment 3

[0100] Tetrachlorosilane was used as the halogenated silane, which was subjected to a flame hydrolysis reaction under the preparation conditions described in Table 1, thereby preparing fumed silica, which was recovered after the separation and recovery process. The amount of impurities in the above-mentioned tetrachlorosilane gas is as follows. Iron: less than 0.1ppm, aluminum: less than 0.1ppm, nickel: less than 0.01ppm, chromium: less than 0.01ppm, titanium: less than 0.01ppm, boron: less than 0.01ppm.

[0101] 250 g of this fumed silica was introduced into a fluidized bed made of quartz glass with an inner diameter of 15 cm. at 5Nm 3 The rate of / h is introduced from the lower part and is heated to the preheated air that temperature is roughly identical with fumed silica, and the introduction time is 30 minutes, after that, take out 225g of silica in the silica that has been introduced from the upper part of the tube, thus Graded. The classified fumed silica is recovered...

Embodiment 4

[0103] The halogenated silane is the same as in Example 1, using tetrachlorosilane, which undergoes a flame hydrolysis reaction under the preparation conditions described in Table 1, thereby preparing fumed silica, which is recovered after the deacidification process. 250 g of this fumed silica was introduced into a fluidized bed made of quartz glass with an inner diameter of 15 cm. at 5Nm 3 The rate of / h is introduced from the lower part and is heated to the preheated air that temperature is roughly identical with fumed silica, and the introduction time is 30 minutes, after that, take out 225g of silica in the silica that has been introduced from the upper part of the tube, thus Graded. This classification step was repeated twice to obtain 203 g of fumed silica. The obtained fumed silica was compressed with a degassing press, whereby the bulk density was adjusted to 0.05 g / cm 3 fumed silica powder. The specific surface area of ​​the obtained fumed silica, the impurity co...

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Abstract

Provided is a fumed silica for chemical-mechanical polishing with which post-polishing scratches occurring on a surface of an object to be polished can be significantly reduced, and which is importantfor miniaturization and multi-layering of a structure. The fumed silica according to the present invention has a BET specific surface area of 57-400 m<2> / g. In a liquid dispersion which is obtained by ultrasonically dispersing 6.25 mass% of this fumed silica in water at a vibration frequency of 20 kHz and an amplitude of 15-25 mu m for 3 minutes, the amount of residues on a sieve is 5 ppm or lessas measured by wet sieving using an electroformed sieve having a mesh opening size of 5 mu m.

Description

technical field [0001] The invention relates to a gas-phase silicon dioxide and a preparation method thereof. Specifically, it relates to a chemical mechanical polishing fumed silica capable of reducing scratches and a preparation method thereof. Background technique [0002] Semiconductor devices are becoming more highly integrated year by year, which requires further miniaturization and multilayer wiring. Accompanied by this, in the manufacturing process of semiconductor devices, the quality requirements for the surface of each layer are becoming more and more stringent, the number of allowable scratches per unit area of ​​the surface is getting smaller and smaller, and the allowable size of scratches The smaller and smaller the allowable scratch depth is, the shallower it is. [0003] In order to meet the above requirements, it is required that the semiconductor surface processing technology, that is, the chemical mechanical polishing method (hereinafter, chemical mecha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/18B24B37/00C03B8/04C03B20/00C09K3/14H01L21/304
CPCB24B37/00C01B33/18C03B20/00C09K3/14H01L21/304C09G1/02C09K3/1409C01P2006/12B24B37/044C01B33/183C01P2004/61C01P2006/80H01L21/30625
Inventor 上田雅英高田幸宏堀常纯哉
Owner TOKUYAMA CORP
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