Bismuth vanadate composite photo-anode protected by polyimide and preparation method of photo-anode
A polyimide and polyimide precursor technology, which is applied in the field of polyimide-protected bismuth vanadate composite photoanode and its preparation, can solve the problem of poor stability of the cocatalyst, hindering the contact between holes and water, and easy decomposition. and other problems, to achieve the effects of good stability, improved photoelectric conversion efficiency, and high photocurrent density
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Embodiment 1
[0028] (1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix uniformly prepared the seed layer precursor solution, put the FTO conductive glass on a spin coater, take the seed layer precursor solution for spin coating, spin coating 3 times, and keep it at 500°C for 10 minutes after each spin coating, and finally put the The spin-coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;
[0029] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bis...
Embodiment 2
[0032] (1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix uniformly prepared the seed layer precursor solution, put the FTO conductive glass on a spin coater, take the seed layer precursor solution for spin coating, spin coating 3 times, and keep it at 500°C for 10 minutes after each spin coating, and finally put the The spin-coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;
[0033] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bis...
Embodiment 3
[0036](1) Preparation of bismuth vanadate seed layer: Weigh 0.3638g of bismuth nitrate and 0.4384g of ethylenediaminetetraacetic acid and dissolve them in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare A solution; weigh Dissolve 0.0877g of ammonium metavanadate and 0.1096g of ethylenediaminetetraacetic acid in 15ml of water, add 1ml of ammonia water to adjust the pH to 10, stir until dissolved, and prepare B solution; mix A solution and B solution, continue to stir and mix uniformly prepared the seed layer precursor solution, put the FTO conductive glass on a spin coater, take the seed layer precursor solution for spin coating, spin coating 3 times, and keep it at 500°C for 10 minutes after each spin coating, and finally put the The spin-coated FTO conductive glass was kept in air at 500°C for 2 hours to obtain a bismuth vanadate seed layer;
[0037] (2) Preparation of bismuth vanadate film photoanode: Disperse 0.1455g of bism...
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