Binding material and binding method of sputtering target
A sputtering target and binding technology, applied in the field of sputtering coating, can solve problems such as difficult-to-bind target binding
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0040] Preparation of the binding material: carbon nanotubes (inner diameter <6nm, length 500nm-30000nm, accounting for 10wt% of the mass of the silica gel) are mixed into the silica gel to form CNT silica gel, which is prepared by mechanically stirring for 1-5 minutes after adding a conductive dispersant . The stirring speed is 50-200 rpm, and the principle is not to increase the temperature of the CNT silica gel too much, so as to avoid the partial curing of the CNT silica gel due to high temperature.
[0041]Bonding of CNT silica gel: Uniformly coat CNT silica gel with a thickness of 0.1 mm or more on the bonding surfaces of the back plate and the target by coating. Then place the back plate and the target material in a horizontal manner, so that the joint surfaces are in contact with each other and apply appropriate pressure (depending on the type of target material, a small pressure should be applied to brittle and soft materials, and a gravity of 2 to 50Kg should be appl...
Embodiment 1
[0043] Embodiment 1 is mixed with the conductive performance of carbon nanotube silica gel
[0044] The resistivity of silica gel not doped with carbon nanotubes is greater than 200MΩ-cm. In order to verify that doping with carbon nanotubes (addition of 5wt% to 13wt%) can improve the conductivity of silica gel, the conductivity of doped carbon nanotubes with different thicknesses can be improved. The performance was studied and the results are shown in Table 1 below:
[0045] Table 1 Conductivity of silica gel with different thickness without adding / adding carbon nanotubes
[0046] Silicone thickness ResistivityΩ-cm Sheet resistance Ω / □ Silica gel not doped with carbon nanotubes (any thickness) >>200M(insulator) >>200M(insulator) Silica gel doped with carbon nanotubes (0.3mm) 4.9X10 -1
[0047] It can be seen from the above table 1 that the silica gel not mixed with carbon nanotube silica gel is an insulator at any thickness, and does not have ele...
Embodiment 2
[0048] Example 2 Indium and CNT silica gel sputtering coating XRD at different power sources
[0049] Using CIGS copper indium gallium selenide (Cu 22.68%, In 16.21%, Ga 6.78%, Se 54.33%) as the target, and the substrate temperature during sputtering is 550°C, to study indium binding or CNT silica gel binding under different power sources The sputtered coating XRD diffraction pattern, the results are as follows Figure 1 to Figure 6 shown.
[0050] figure 1 , image 3 and Figure 5 Three XRD patterns of indium binding with figure 2 , Figure 4 and Figure 6 The three XRD patterns of CNT silica gel binding show a typical chalcopyrite crystal structure. The typical structure of copper indium gallium selenide film is chalcopyrite crystal structure, and when Ga and In and Ga(Ga / (In+Ga )) has an atomic ratio of 0.3 and its 2θ values are 26.897°, 44.645°, and 52.94°, and its characteristic peaks correspond to the diffraction peaks of (112), (220), and (312) crystal planes ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| bond strength | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More