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A Broadband Perfect Absorber for Visible Light Based on Semiconductor Metasurface

Inactive Publication Date: 2021-06-11
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zhu et al. (Optics Express. Vol. 25, p. 5781 (2017)) have realized a perfect absorber based on a dielectric, but the absorption bandwidth is narrow, and there are not many studies on a dielectric broadband perfect absorber

Method used

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  • A Broadband Perfect Absorber for Visible Light Based on Semiconductor Metasurface
  • A Broadband Perfect Absorber for Visible Light Based on Semiconductor Metasurface
  • A Broadband Perfect Absorber for Visible Light Based on Semiconductor Metasurface

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Embodiment 1

[0043] A broadband visible light absorber based on a semiconductor metasurface, including a metal reflective layer 1 and a dielectric layer 2 . The material of the metal reflective layer 1 is gold, and the thickness t is 100 nanometers. The material of the dielectric layer 2 is silicon, and the thickness h is 50 nm to 80 nm.

[0044] In order to prepare the above-mentioned absorber, first adopt ion beam sputtering deposition method on the upper surface of the sapphire substrate, deposit a gold film with a thickness of 100 nanometers as the metal reflective layer 1, and adopt ion beam sputtering deposition on the surface of the metal reflective layer 1 method, depositing a silicon film with a thickness of 70 nanometers as the dielectric layer 2, and then using the focused ion beam lithography method to etch the dielectric layer 2 to obtain the structure of the rhombic resonator 22, such as figure 1 shown.

[0045] Such as figure 2 As shown, the dielectric layer 2 is compose...

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Abstract

The invention discloses a visible light broadband perfect absorber based on semiconductor metasurface. The absorber is an optical metasurface structure, which includes a metal reflection layer and a dielectric layer arranged on the metal reflection layer; wherein, the dielectric layer is composed of periodic structural units, and the structural units are square. Each structural unit is composed of four rhombic dielectric block resonators, the four rhombic dielectric block resonators are arranged in a "cross" shape, and two adjacent structural units share one rhombic resonator. Compared with the existing absorber, the absorber of the present invention utilizes the strong electromagnetic resonance mode of the dielectric resonator and the coupling resonance mode between adjacent resonators, which has a strong absorption effect on incident light, so it can realize ultraviolet- Broadband perfect absorption in the visible‑near infrared range.

Description

technical field [0001] The invention relates to the field of optics, and belongs to a visible light perfect absorber based on a semiconductor metasurface, in particular to a visible light broadband perfect absorber based on a semiconductor metasurface. Background technique [0002] Metamaterials with perfect light absorption properties are a new direction of development in the past decade. Perfect light absorbers are used in a wide range of fields, such as thermal radiation, photoelectric detection, biosensing, radar stealth, and solar thermal photovoltaics. At present, a variety of perfect absorbers have been designed. However, perfect absorbers can be divided into two types according to different absorption bands, one is narrowband absorber and the other is broadband absorber. Narrow-band absorbers can confine photons to specified wavelength bands. According to the number of absorption bands, they can be divided into single-band perfect absorbers and multi-band perfect ab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B5/00G02B1/00
CPCG02B1/002G02B5/003
Inventor 刘海英李晨辉许家玮郑允宝
Owner SOUTH CHINA NORMAL UNIVERSITY