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Manufacturing method of top emission type indium gallium zinc oxide thin film transistor device

一种器件制造方法、氧化铟镓锌的技术，应用在半导体/固态器件制造、半导体器件、电固体器件等方向，能够解决不利成本降低与良率提升、沟道电流密度小等问题

Active Publication Date: 2021-07-06
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the present invention provides a method for manufacturing a top-emission type indium gallium zinc oxide thin film transistor device, which solves the problem of top-emission gate indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) thin film transistor ( Thin Film Transistor, TFT) device gate and source / drain need to use three photomasks, which is not conducive to cost reduction and yield improvement, and the gate insulating layer is usually made of silicon oxide, resulting in low channel current density minor technical issues

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  • Manufacturing method of top emission type indium gallium zinc oxide thin film transistor device
  • Manufacturing method of top emission type indium gallium zinc oxide thin film transistor device

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Embodiment Construction

[0038] Please refer to Figure 1A and 1B , The method for manufacturing a light-emitting indium gallium zinc oxide thin film transistor device of the present invention includes: a first photolithography step S01, a second photolithography step S02, a gate insulating layer forming step S03, a third photolithography step S04, and source via hole formation Step S05, InGaZnO active layer exposing step S06, source / drain forming step S07, planarization layer forming step S08, fourth photolithography step S09, fifth photolithography step S10, and sixth photolithography step S11.

[0039] Please refer to figure 2 , the first photolithography step (Photo Engraving Process, PEP) (using the first photomask) S01, including depositing the first metal layer 20 on the glass substrate 10, and patterning the first metal layer 20 to be in the The light shielding layer LS and the source layer S are formed on the first metal layer 20 .

[0040] Please refer to image 3 , the second photolith...

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Abstract

The invention discloses a method for manufacturing a top-emission type indium gallium zinc oxide thin film transistor device, comprising a first photolithography step, a second photolithography step, a gate insulating layer formation step, a third photolithography step, and a source via hole formation step , InGaZnO active layer exposing step, source / drain forming step, planarization layer forming step, fourth photolithography step, fifth photolithography step, and sixth photolithography step. The present invention adopts the polyimide electrode barrier spacer to prepare the grid and source / drain, and the source / drain and grid can be directly formed through the electrode barrier spacer, so that three photomasks are reduced to one, and the polyimide The use of amine as the gate insulating layer can increase the channel current density, thereby simplifying the complexity of the manufacturing method and improving the production efficiency.

Description

technical field [0001] The invention relates to a method for manufacturing a top-emission type indium gallium zinc oxide thin film transistor device, which adopts a polyimide (Polyimide, PI) electrode barrier wall isolation column to prepare a gate and a source / drain electrode, and directly passes through the PI electrode barrier wall isolation column The source / drain and the gate can be formed, so that three photomasks are reduced to one. At the same time, PI as the gate insulating layer can increase the channel current density, thereby simplifying the complexity of the manufacturing method and improving production efficiency. Background technique [0002] Currently, Active Matrix Liquid Crystal Display (AMLCD) and Active Matrix Organic Light Emitting Diode (AMOLED) displays use amorphous indium gallium zinc oxide (Indium Gallium Zinc Oxide) , IGZO) is a representative metal oxide thin film transistor (Thin Film Transistor, TFT) device, which has significant advantages such...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12
CPCH01L27/1225H01L27/1259H01L27/1288H10K59/1201H01L21/02565H01L29/66742H01L29/7869
Inventor 罗延欢
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD