Microwave amplifier and implementation method thereof

Abstract

The invention discloses a microwave amplifier and an implementation method thereof, and belongs to the technical field of quantum mechanics, semiconductor physics and electronics. Polarization exciters in a transistor containing a heterojunction are excited to a high-energy level through pumping microwaves, and the polarization exciters excited to the high-energy level are downwards transitioned to a specified energy level in an energy level region by utilizing a chain effect of an input signal in an energy level transition process, so that amplification of input signal power is realized. Theproblems of crosstalk of a bias circuit of the direct-current bias amplifier, high circuit wiring requirement, severe direct-current voltage ripple interference and pulse amplifier working environmentrequirement, large size, complex process, high cost and the like are effectively solved; the microwave amplifier is realized by adopting a transistor manufactured by adopting a general semiconductorprocess, the amplifier is simple in structure and low in working temperature requirement, the pumping power can be provided in a space radiation form, and the microwave amplifier has very good flexibility.

Description

technical field [0001] The invention belongs to the technical fields of quantum mechanics, semiconductor physics and electronics, and in particular relates to a microwave amplifier and a realization method thereof. Background technique [0002] The amplifier is a basic device in electronics, and its main function is to amplify the power of the excitation signal and output it. Generally speaking, RF and microwave amplifiers are mostly implemented by transistors. This type of amplifier needs to introduce direct current. The purpose is to bias the transistor in the amplification area. From the perspective of energy, it converts direct current energy into microwave energy. It often causes crosstalk between devices and between modules, and it is difficult to remove this kind of crosstalk. At the same time, due to certain fluctuations in the direct current, this will introduce additional noise. Where noise performance is critical, transistor amplifiers operating at very low tempe...

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Problems solved by technology

[0003] In order to solve the crosstalk existing in the existing DC bias amplifier and the low-noise amplifier’s dependence on the low-temperature environment, the present invention proposes a microwave amplifier and its realization method. When the element is excited to a high energy level, the chain effect of the input signal in the energy level transition process is used to make the polaritons excited to the high energy level jump down to the specified energy level in the energy level region, and the power of the input signal is amplified.

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