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Non-volatile spin-orbit torque element and electroresistive change effect-based non-volatile electric control spin-orbit torque method

A spin-orbit, non-volatile technology, applied in the field of information storage, can solve the problems of volatile regulation of the magnetic moment reversal process, and achieve the effect of saving energy

Active Publication Date: 2019-09-10
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the device needs to maintain the voltage continuously during operation. When the current or voltage is removed, the reversal state of the magnetic moment will disappear, and the process of regulating the magnetic moment reversal is volatile.

Method used

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  • Non-volatile spin-orbit torque element and electroresistive change effect-based non-volatile electric control spin-orbit torque method
  • Non-volatile spin-orbit torque element and electroresistive change effect-based non-volatile electric control spin-orbit torque method
  • Non-volatile spin-orbit torque element and electroresistive change effect-based non-volatile electric control spin-orbit torque method

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Such as figure 1 As shown, a non-volatile spin-orbit torque element, including:

[0040] The substrate 1 is used to carry the element, and the substrate is a silicon-based substrate;

[0041] The first electrode 2, the first electrode material is 0.5nm Ta, which is arranged above the substrate;

[0042] The heterostructure layer 3, the heterostructure layer is arranged above the first electrode, which is a 0.5 nm thick heavy metal thin film 3-1 prepared from Pt, and a 1-2 nm thick ferromagnetic film prepared from Ni. Metal thin film 3-2 and 20nm thick CeO 2 Magnetic multilayer film structure composed of 3-3 combined deposition of resistive switching thin film;

[0043] The second electrode 4, the second electrode material is Au, which is arranged above the heterostructure layer.

Embodiment 2

[0045] A non-volatile electronically controlled spin-orbit torque method based on the electroresistive effect, the method comprising the following steps:

[0046] Preparation of the nonvolatile spin-orbit torque element in Example 1:

[0047] Substrate cleaning: immerse the silicon-based substrate in acetone, ultrasonically clean it for 10 minutes, and then wash it three times with distilled water; then immerse the silicon-based substrate in a mixture of 60% hydrogen peroxide and 98% concentrated sulfuric acid with a volume ratio of 1:1 Soak in water for 15 minutes; take it out, put it in water for 10 minutes, and then wash it with running water to get a clean substrate.

[0048] Magnetron sputtering deposits a layer of Ta first electrode with a thickness of 1 nm on the cleaned substrate;

[0049] On the first electrode, a Pt heavy metal film, a ferromagnetic Fe film and a CeO film are sequentially deposited by magnetron sputtering. 2 Resistive thin film, forming a heterogen...

Embodiment 3

[0053] A nonvolatile spin-orbit torque element comprising:

[0054] a substrate, used to carry the element, and the substrate is a silicon-based substrate;

[0055] The first electrode, the first electrode material is Au, which is arranged above the substrate;

[0056] The heterostructure layer, the heterostructure layer is arranged above the first electrode, which is a Pt heavy metal film with a thickness of 1nm, a Co film with a thickness of 1.5nm and a CeO film with a thickness of 20nm 2 Magnetic multilayer film structure composed of combined deposition of resistive switching thin films;

[0057] The second electrode, where the second electrode material is Ag, is disposed above the heterostructure layer.

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Abstract

The invention relates to the technical field of information storage, in particular to a non-volatile spin-orbit torque element. The non-volatile spin-orbit torque element comprises an element substrate for bearing, a first electrode arranged above the substrate, a heterostructure layer formed by combining and depositing a heavy metal film and a resistive change film, and a second electrode formedabove the heterostructure layer. An additional electric field is applied to the first electrode and the second electrode of the non-volatile spin-orbit torque element, so that the control of a resistive change effect on magnetic torque reversal of a spin-orbit torque can be realized. The defect that in the prior art, the current or voltage-controlled magnetic torque reversal process of a spin-orbit torque drive device is volatile is overcome; and the magnetic torque reversal process of the element is non-volatile; and after a current or a voltage is removed, a reversal state of a magnetic torque continues to exist. The used adjusting voltage is a low voltage, and a large amount of energy loss cannot be generated in the control process, so that the energy conservation of the device is facilitated.

Description

technical field [0001] The invention relates to the technical field of information storage, in particular to a nonvolatile spin-orbit torque element and a nonvolatile electronically controlled spin-orbit torque method based on the electroresistive effect of the element. Background technique [0002] Spin-Orbit Torque (Spin-Orbit Torque, SOT) is based on spin-orbit coupling, using the spin current induced by the charge flow to generate spin transfer torque, and then achieve the purpose of regulating the magnetic memory unit. Due to its separate read and write paths, low energy consumption, fast writing speed, strong magnetic moment reversal, high efficiency, strong locality, and high stability, it has great potential in the fields of magnetic information storage devices, magnetic memory, and computing. The important application prospects have attracted extensive attention from the scientific and technical circles. [0003] However, although the SOT can regulate the magnitude...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01L43/12G11C11/16G11C13/00
CPCG11C11/161G11C11/1697G11C13/0007G11C13/0038H10N50/01H10N50/85H10N50/10
Inventor 温嘉红赵晓宇骆泳铭周铁军
Owner HANGZHOU DIANZI UNIV
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