Low-noise wide-spectral-response single-photon avalanche photodiode and manufacturing method thereof

Abstract

The invention discloses a low-noise wide-spectral-response single-photon avalanche photodiode. The single-photon avalanche photodiode comprises a substrate P-Sub, a PBL region is arranged on the substrate P-Sub, a P-EPI region is arranged on the PBL region, a P-Well region is arranged in the P-EPI region, a P + injection region is arranged in the P-Well region, a DN-Well region is arranged on the inner side of the P-EPI region, an N-Well region is arranged in the DN-Well region, an N + injection region is arranged in the N-Well region, and the N + injection region, the N-Well region, the DN-Well region and the PBL region form a full depletion region. Due to the existence of the full depletion region, the photon detection probability of the device can be improved, the depletion region enables a electric field distribution peak value to be far away from the surface region of the device material, so the energy level capture problem caused by material defects is greatly reduced, the dark current of the device is reduced, and the purpose of low noise is achieved.

Description

technical field [0001] The invention relates to the field of diodes, in particular to a single photon avalanche photodiode with low noise and wide spectral response and a manufacturing method thereof. Background technique [0002] With the continuous progress and development of microelectronics technology and integrated circuit technology, the performance of single-photon avalanche photodiodes based on traditional silicon-based CMOS technology has been significantly improved in terms of responsivity, quantum efficiency, and integration. Single-photon detection technology has various application potentials in contemporary life, such as quantum communication, weak signal detection, and high-sensitivity sensors. Single-photon detectors mainly include photomultiplier tubes, avalanche photodiodes, superconducting single-photon detectors, and so on. In a single-photon detection system using a single-photon avalanche photodiode, the photon detection probability and dark count are ...

AI Technical Summary

Problems solved by technology

[0003] The structure of the traditional single-photon avalanche photodiode is as follows figure 1 As shown, the avalanche multiplication region of the traditional device is mainly composed of a heavily doped region and a lightly doped well, the probability of photon detection is low, and only photons of a single wavelength can be detected, and the multiplication region is close to the surface area of ​​the material. When the conventional structure works in the Geiger mode, a large number of carriers flow through the single-photon avalanche photodiode, and some carriers are trapped by low-level defects in the surface material

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