Unlock instant, AI-driven research and patent intelligence for your innovation.

Single photon avalanche photodiode with low noise and wide spectral response and its fabrication method

A single-photon avalanche and photodiode technology, applied in the field of diodes, can solve the problem of low probability of photon detection, achieve wide spectral response range, simple manufacturing process, and reduce dark current

Active Publication Date: 2021-05-28
HUNAN NORMAL UNIVERSITY
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The structure of the traditional single-photon avalanche photodiode is as follows figure 1 As shown, the avalanche multiplication region of the traditional device is mainly composed of a heavily doped region and a lightly doped well, the probability of photon detection is low, and only photons of a single wavelength can be detected, and the multiplication region is close to the surface area of ​​the material. When the conventional structure works in the Geiger mode, a large number of carriers flow through the single-photon avalanche photodiode, and some carriers are trapped by low-level defects in the surface material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Single photon avalanche photodiode with low noise and wide spectral response and its fabrication method
  • Single photon avalanche photodiode with low noise and wide spectral response and its fabrication method
  • Single photon avalanche photodiode with low noise and wide spectral response and its fabrication method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0028] Such as Figure 2-Figure 4 As shown, a single-photon avalanche photodiode with low noise and wide spectral response includes a substrate P-Sub101, a PBL region 102, a DN-Well region 103, a P-EPI region 104, an N-Well region 105, and a P-Well region 106 , P+ implantation region 107 , N+ implantation region 108 . P-Sub is a P-type substrate region, PBL is a P-type buried layer region, DN-Well is a deep N well region, and P-EPI is a P-type epitaxial layer region.

[0029] The substrate P-Sub101 is provided with a PBL region 102, the PBL region 102 is provided with an annular P-EPI region 104, the P-EPI region 104 is provided with an annular P-Well region 106, and the P-Well region 106 is provided with An annular P+ implantation region 107, an annular DN-Well region 103 is arranged inside the P-EPI region 104, an annular N-Well region 105 is arrang...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a single-photon avalanche photodiode with low noise and wide spectral response, which comprises a substrate P-Sub, a PBL area is arranged on the substrate P-Sub, a P-EPI area is arranged on the PBL area, and a P-EPI area is provided. There is a P-Well area in the middle, a P+ injection area in the P-Well area, a DN-Well area inside the P-EPI area, a N-Well area in the DN-Well area, and a N-Well area in the N-Well area N+ injection region; N+ injection region, N-Well region, DN-Well region, and PBL region constitute a fully depleted region. The existence of the fully depleted region in the present invention can improve the photon detection probability of the device, and the depletion region will make the peak value of the electric field distribution away from the surface area of ​​the device material, greatly reducing the energy level capture problem caused by material defects, and reducing the energy consumption of the device. dark current to achieve low noise.

Description

technical field [0001] The invention relates to the field of diodes, in particular to a single photon avalanche photodiode with low noise and wide spectral response and a manufacturing method thereof. Background technique [0002] With the continuous progress and development of microelectronics technology and integrated circuit technology, the performance of single-photon avalanche photodiodes based on traditional silicon-based CMOS technology has been significantly improved in terms of responsivity, quantum efficiency, and integration. Single-photon detection technology has various application potentials in contemporary life, such as quantum communication, weak signal detection, and high-sensitivity sensors. Single-photon detectors mainly include photomultiplier tubes, avalanche photodiodes, superconducting single-photon detectors, and so on. In a single-photon detection system using a single-photon avalanche photodiode, the photon detection probability and dark count are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/02H01L31/0352H01L31/107H01L31/18
CPCH01L31/02027H01L31/035272H01L31/107H01L31/18
Inventor 金湘亮汪洋
Owner HUNAN NORMAL UNIVERSITY