Lasers or leds based on nanowires grown on graphene type substrates
A graphite substrate, laser device technology, applied in lasers, laser devices, semiconductor lasers, etc., can solve the problems of no one considering lasers or LEDs, difficult to manufacture electrically pumped lasers, low conductivity, etc.
Active Publication Date: 2019-09-17
NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
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Problems solved by technology
For example, GaAs-based NWs grow epitaxially in the [111] direction, which is incompatible with two-dimensional (2D) GaAs / AlAs DBRs grown on GaAs(100)
[0014] 2. Since many DBR materials suitable as mirrors have low conductivity or are even insulating, it is difficult to fabricate electrically pumped lasers
[0019] However, no one has considered lasers or LEDs based on NWs grown on graphene-type substrates (i.e., NW lasers / LEDs) before.
Method used
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[0129]The present invention relates to the fabrication of light-emitting devices such as lasers or LEDs based on NWs grown on graphitic substrates. The NW lasers of the present invention are preferably vertical cavity surface emitting lasers (VCSELs) - ie NW VCSELs. The structure of the NW VCSEL is described in more detail below. The NWLEDs of the present invention are preferably resonant cavity light emitting diodes (RCLEDs) - ie NWRCLEDs. NW RCLEDs may be of the same construction as NW VCSELs, but in operation the NW RCLEDs are arranged to operate below the laser threshold rather than at or above the laser threshold. Therefore, it should be understood that the following description of NW VCSELs also describes the structure of NW RCLEDs. It should also be understood that NW VCSELs may be considered NW RCLEDs when operating below the lasing threshold. The light output of NW RCLEDs mainly consists of spontaneous emission because NW RCLEDs operate below the lasing threshold. ...
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Abstract
A device, such as a light-emitting device, e.g. a laser device, comprising: a plurality of group III-V semiconductor NWs grown on one side of a graphitic substrate, preferably through the holes of an optional hole-patterned mask on said graphitic substrate; a first distributed Bragg reflector or metal mirror positioned substantially parallel to said graphitic substrate and positioned on the opposite side of said graphitic substrate to said NWs; optionally a second distributed Bragg reflector or metal mirror in contact with the top of at least a portion of said NWs; and wherein said NWs comprise an n-type doped region and a p-type doped region and optionally an intrinsic region there between.
Description
technical field [0001] The present invention relates to the use of thin graphite layers as transparent substrates for the growth of nanowires (NWs) that can be formed into devices such as Vertical Cavity Surface Emitting Lasers (VCSELs) or Resonant Cavity Light Emitting Diodes (RCLEDs). [0002] In particular, the invention relates to the use of III-V semiconductor NWs on graphite substrates including suitable doping, and the invention may include quantum heterostructures such as quantum wells, quantum dots or superlattices, which quantum heterostructures position Between two distributed Bragg reflectors or metal mirrors to allow the formation of VCSELs or RCLEDs. Background technique [0003] Interest in semiconductor nanocrystals, such as NWs, has grown in recent years as nanotechnology has become an important engineering discipline. NWs, also known as nanowhiskers, nanorods, nanopillars, nanopillars, etc., have been found by some creators to have important applications i...
Claims
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IPC IPC(8): H01S5/02H01S5/34H01S5/343H01S5/183H01S5/42H01S5/04H01S5/042H01S5/20H01S5/40
CPCH01S5/0218H01S5/041H01S5/18341H01S5/18369H01S5/2009H01S5/341H01S5/34333H01S5/4068H01S5/423H01L33/105H01L33/007H01L33/46H01L33/0066H01S5/04253H01S5/18375H01L21/02444H01L21/02603H01L21/02538H01S5/18361H01S5/2228H01L33/0025H01L33/06H01L33/32H01L33/60H01S5/343H01L29/0676
Inventor B·O·M·菲姆兰H·韦曼D·任
Owner NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)