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Method for reducing content of residual silicone in SiCf/SiC composites prepared by infiltration process

A composite material and silicon content technology, which is applied in the field of ceramic matrix composite material preparation, can solve problems such as plugging holes, unfavorable infiltration reactions, and affecting high-temperature oxidation resistance of composite materials, and achieves simple formula, reduced residual silicon, and good chemical phase. capacitive effect

Inactive Publication Date: 2019-09-20
AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, adding other metal powders to silicon can easily cause plugging in the subsequent reaction process, which is not conducive to the infiltration reaction.
In addition, this method may introduce Al into the matrix, which will also affect the high temperature oxidation resistance of the composite.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Step 1: Mix 20g of phenolic resin, 100g of ethanol, and 30g of TiC powder (5μm) and then ultrasonicate for 6 hours to make a mixed slurry;

[0025] Step 2: Brush the mixed slurry prepared in step 1 on the fiber two-dimensional fabric containing the SiC / BN composite interface layer, and let it dry at room temperature for 6 hours to make a prepreg. Wherein, the volume fraction of fiber two-dimensional fabric is 25%;

[0026] Step 3: Put the prepreg obtained in step 2 into a flat mold and use a hot press for hot pressing molding. The hot pressing temperature is 260°C, the pressure is 3 MPa, and the hot pressing time is 3 hours to obtain a preform;

[0027] Step 4: Carbonize the preform obtained in Step 3 at 850°C for 30 minutes in a nitrogen atmosphere to prepare a porous body;

[0028] Step 5: Modulate silicon powder (purity 99.5%) into a slurry with ethanol, use the method of brushing to make the slurry adhere to the surface of the porous body, and after drying at room ...

Embodiment 2

[0030] Step 1: Mix 40g of phenolic resin, 150g of acetone, and 32g of Ti powder (2 μm) and then ultrasonicate for 10 hours to make a mixed slurry;

[0031] Step 2: Brush the mixed slurry prepared in Step 1 on the fiber two-dimensional fabric containing the SiC / BN composite interface layer, and let it dry at room temperature for 12 hours to make a prepreg. Wherein, the volume fraction of fiber two-dimensional fabric is 30%;

[0032] Step 3: Put the prepreg obtained in step 2 into a flat mold and use a hot press for hot pressing molding. The hot pressing temperature is 280 ° C, the pressure is 4 MPa, and the hot pressing time is 4 hours to obtain a preform;

[0033] Step 4: Carbonize the preform obtained in Step 3 at 1100° C. for 30 minutes in a nitrogen atmosphere to prepare a porous body;

[0034] Step 5: Use ethanol to adjust the silicon powder (99.9% purity) into a slurry, and use the method of brushing to make the slurry adhere to the surface of the porous body. After dryi...

Embodiment 3

[0036] Step 1: Mix 60g of phenolic resin, 140g of toluene, 28g of TiC powder (5μm) and 8g of Ti powder (10μm) and ultrasonically 20h to make a mixed slurry;

[0037] Step 2: Brush the mixed slurry prepared in Step 1 on the fiber two-dimensional fabric containing the SiC / BN composite interface layer, and let it dry at room temperature for 72 hours to make a prepreg. Wherein, the volume fraction of fiber two-dimensional fabric is 28%;

[0038] Step 3: Put the prepreg obtained in step 2 into a flat mold and use a hot press for hot pressing molding. The hot pressing temperature is 310°C, the pressure is 10 MPa, and the hot pressing time is 6 hours to obtain a preform;

[0039] Step 4: Carbonize the preform obtained in Step 3 at 1400°C for 60 minutes in a nitrogen atmosphere to prepare a porous body;

[0040]Step 5: Use ethanol to adjust the silicon powder (purity: 99.5%) into a slurry, use the method of brushing to make the slurry adhere to the surface of the porous body, and aft...

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Abstract

The invention belongs to the technical field of preparation of ceramic matrix composites, and particularly relates to a method for reducing the content of residual silicone in SiCf / SiC composites prepared by an infiltration process. According to the method, silicon carbide fibers, serving as fiber reinforcements, and paste containing Ti powder or TiC powder are prepared into prepregs, and after hot press molding, carbonization and infiltration, the silicon carbide fiber reinforced silicon carbide composites are prepared. After introduction, Ti or TiC can react with the residual silicone in matrixes to generate TiSi2. The method can overcome the defect that silicone remains in the matrixes of the ceramic matrix composites prepared by the infiltration process, and can improve the high temperature stability of the composites without affecting the original mechanical properties of the composites.

Description

technical field [0001] The invention belongs to the technical field of preparation of ceramic matrix composite materials, and in particular relates to a process for reducing infiltration to prepare SiC f method for residual silicon content in SiC / SiC composites. Background technique [0002] Silicon carbide fiber reinforced silicon carbide (SiC f / SiC) composite material has excellent properties such as high temperature resistance, low density, oxidation resistance and corrosion resistance, and has become one of the most potential structural materials for engine hot end parts. At present, the MI process is the only one in the world that realizes SiC f / SiC composite material batch production and application preparation process. It has the advantages of short manufacturing cycle, low cost, and high degree of densification, and can prepare SiC with a porosity lower than 4%. f / SiC composite materials, so as to meet the requirements of high-volume and long-life engines. Sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/565C04B35/622
CPCC04B35/806C04B35/565C04B35/622C04B2235/3891C04B2235/6567
Inventor 周怡然焦健吕晓旭刘虎姜卓钰杨金华高晔
Owner AVIC BEIJING INST OF AERONAUTICAL MATERIALS
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