A kind of preparation method of inp film with distributed Bragg reflector
A Bragg Mirror, Thin Film Technology
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0030] The present invention is a kind of preparation method of InP thin film with distributed Bragg reflector, comprises the following steps:
[0031] Step 1. In the electrolyte, the InP sheet is electrochemically etched to make porous InP, and then the voltage is increased to prepare a peeled large-area porous InP film;
[0032] Wherein the electrolyte is any one of the aqueous solutions of oxalic acid, nitric acid or hydrochloric acid, and the concentration of the electrolyte is 0.2-0.8mol / L;
[0033] The etching voltage of electrochemical etching is 1-10V, and the etching rate is 1-3μm / min;
[0034] The thickness of the InP sheet is 300-500μm, and the doping concentration is 1.0×10 18 ~4×10 18 cm -3 ;
[0035] Step 2. Perform electrochemical etching on the n-GaN / u-GaN periodic structure in the electrolyte to obtain a distributed Bragg reflector (DBR);
[0036] Wherein the electrolyte is any one of aqueous solutions of hydrofluoric acid, oxalic acid or nitric acid, and...
Embodiment 1
[0042] Step 1. Prepare 0.4mol / L nitric acid acid solution with deionized water; as the electrolyte, turn on the etching equipment, and set the etching voltage to 7V; use the platinum wire as the cathode, and the InP sheet as the anode, at a constant voltage Etching for 10 minutes; the etching rate of the InP sheet is 1-3 μm / min, and after the etching is completed, a porous InP film is formed; as shown in FIG. 1 . Then the voltage was increased to 15V, and a peeled InP film was obtained.
[0043] Step 2. Prepare 0.2mol / L oxalic acid acid solution with deionized water; as the electrolyte, turn on the etching equipment, and set the etching voltage to 20V; use platinum wire as the cathode, and n-GaN / u-GaN The periodic structure is the anode, etched at constant pressure for 30 minutes; the thickness of the u-GaN layer is 80nm, and the doping concentration is 1.0×10 15 cm -3 , the thickness of the n-GaN layer is 60nm, and the doping concentration is 1×10 19 cm -3 . The etching ...
Embodiment 2
[0047] Step 1. Use deionized water to prepare 0.4mol / L oxalic acid acidic solution; as the electrolyte, turn on the etching equipment, and set the etching voltage to 9V; use platinum wire as the cathode, and InP sheet as the anode, constant voltage Etching for 15 minutes; the etching rate of the InP sheet is 1-2 μm / min. After the etching is completed, a porous InP film is formed; then the voltage is increased to 20V to obtain a stripped InP film.
[0048] Step 2. Prepare 0.5mol / L hydrofluoric acid acidic solution with deionized water; as the electrolyte, turn on the etching equipment, and set the etching voltage to 18V; use platinum wire as the cathode, and use n-GaN / u -The GaN periodic structure is the anode, etched at constant pressure for 25 minutes; the etching rate of the n-GaN / u-GaN periodic structure is 20-80nm / min, after the etching is completed, turn off the etching equipment; soak the anode sample in After 10 minutes in deionized water, dry it with nitrogen gas to ob...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More