High-temperature electrostatic chuck and manufacturing method thereof

Abstract

The utility model provides a high-temperature electrostatic chuck. The high-temperature electrostatic chuck comprises a base, an upper transition layer, an absorption electrode layer and an upper insulation layer are arranged in order on the base, a lower transition layer, a heating electrode layer and a lower insulation layer are arranged in order at the lower portion of the base, the absorptionelectrode layer comprises dual-absorption electrodes, the dual-absorption electrodes are respectively supplied by direct current pulse voltages with the same amplitude, the opposite polarities and thephase difference of 180 degrees when a wafer is absorbed, the positive and negative polarities of the dual-absorption electrodes are interchanged when the wafer is released, the heating electrode layer includes two at least heating zones, the centers of circles of the heating zones are merged evenly and are arranged, and the heating power is independently controlled. The manufacturing method of the chuck comprises the following steps of: depositing the upper transition layer and the lower transition layer on the upper surface and the lower surface of the base respectively by adopting a magnetic control coating film; depositing the heating electrode layer on the back of the lower transition layer; depositing the lower insulating layer on the back of the heating electrode layer; depositingthe adsorption electrode layer on the front surface of the upper transition layer; and depositing an upper insulating layer on the front surface of the adsorption electrode layer. The method has the advantages of the good temperature uniformity of the wafer, the adsorption fastening, the high production efficiency and the like.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a high-temperature electrostatic chuck and a manufacturing method thereof. Background technique [0002] With the implementation of my country's industrial strong foundation project, the demand for localization of high-end equipment is becoming more and more intense, and integrated circuit manufacturing is ushering in an industrial spring, especially the rapid development of the third-generation wide bandgap semiconductors, which are used in the manufacture of semiconductor devices, especially SiC The demand for high temperature electrostatic chucks for device manufacturing is rising dramatically. [0003] In the semiconductor device manufacturing process, in order to fix and support the wafer and avoid the movement or dislocation of the wafer during the process, the wafer needs to be fixed. At the same time, the wafer needs to be heated during the process to heat...

AI Technical Summary

Problems solved by technology

Traditional mechanical chucks and infrared quartz tube heating have many defects: for example, due to pressure, collision, etc., it is easy to cause wafer damage, which affects the area where the wafer can be effectively processed, and the deposition of corrosion particles on the wafer surface is prone to affect the wafer and chuck. The heat conduction between them, the temperature uniformity of the wafer is poor, etc., and the production efficiency is also low, which cannot meet the needs of mass production.

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