Self-heating effect test structure and method

Abstract

The invention discloses a self-heating effect test structure, which comprises: a first device to be tested (1), a second device to be tested (2), a third device to be tested (3), a first sensor (4), a first Two sensors (5); the first device to be tested (1) and the second device to be tested (2) are arranged in a mirror image with respect to the first sensor (4), the second device to be tested (2) and the The third device under test (3) is arranged in a mirror image with respect to the second sensor (5). The advantage of the present invention is that the structure greatly reduces the thermal diffusion between the self-heating device and the sensing device, so that the temperature condition of the sensing device is closer to that of the self-heating device. The self-heating conditions of the source and drain ends of the self-heating device can be measured at the same time, which can directly reflect the temperature difference between the source and the drain. The structure utilizes the sensitivity of gate tunneling current to temperature to obtain the information of the device under test more quickly and accurately, and reduces the time and cost of information acquisition.

Description

Technical field[0001]The present invention relates to the semiconductor device reliability testing, and a self-heating effect test structure and method are disclosed.Background technique[0002]In recent years, with the integrated integrated circuit integration of MOS (field effect transistors), the constant reduction in device feature size is increased, and the internal power consumption of high integration chips is increased. The temperature rise caused by heat in the device is more severe, especially as the device. Entering the nanoscale level, the self-heating effect has become an important factor in restricting the development of MOSFETS devices. Therefore, how to achieve more accurate and reliable self-heating effects for devices, for nano MOS devices, the design and research of test structures is critical.[0003]At present, a variety of characterization methods for self-heating effect testing is diverse, mainly divided into electrical metrics and optical tableting, and the tempe...

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Problems solved by technology

But the problem with this approach is that a large part of the heat is necessarily lost in the process of transferring the heat from the self-heating transistor to the adjacent diode

In addition, modern three-dimensional MOS devices such as FinFET have many heat dissipation paths, and the electrical data detected by the method of thermal diffusion affecting adjacent transistors has a large deviation compared with the real data.

Therefore, the existing characterization methods generally have the disadvantages of poor reliability, low measurement accuracy, large errors, inability to simultaneously measure the thermal conditions of the source and drain terminals, and cumbersome test structures in terms of self-heating effect characterization

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