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Back passivation solar cell and preparation method thereof

A technology of solar cells and back passivation, which is applied in circuits, photovoltaic power generation, electrical components, etc., and can solve the problems of low photoelectric conversion efficiency of back passivated solar cells

Inactive Publication Date: 2019-10-18
GCL SYST INTEGRATION TECH +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Based on this, it is necessary to address the problem of low photoelectric conversion efficiency of traditional back passivated solar cells, to provide a back passivated solar cell capable of improving photoelectric conversion efficiency and its preparation method

Method used

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  • Back passivation solar cell and preparation method thereof
  • Back passivation solar cell and preparation method thereof
  • Back passivation solar cell and preparation method thereof

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preparation example Construction

[0035] refer to figure 1 , the invention provides a kind of preparation method of back passivation solar cell, it comprises the steps:

[0036] S1. Make a passivation film 110 on the back side of the P-type silicon wafer 100, uniformly print some first aluminum pastes containing corrosion aluminum paste on the surface of the passivation film 110, and print the passivation film of some first aluminum pastes. The film 110 is dried.

[0037] Wherein, the main function of the passivation film 110 is to reduce the reflectivity of the surface of the back passivated solar cell, which is more conducive to the utilization of light energy. It can be understood that the material and preparation method of the passivation film 110 are not too limited, and it can be produced by conventional methods and materials for those skilled in the art. For example, the material of the passivation film 110 can be SiN or SiN 2 , the method for forming the passivation film 110 is the PECVD method.

[...

Embodiment 1

[0071] Both the first aluminum paste and the second aluminum paste used in the present invention are purchased from Toyo Aluminum Co., Ltd.

[0072] A preparation method for a back passivated solar cell, comprising the steps of:

[0073] (1) Take the P-type silicon wafer with the SiN film layer grown on the back surface. It can be understood that the P-type silicon wafer is made by sequentially performing conventional steps such as damage removal, texturing, and phosphorus diffusion on the P-type silicon substrate.

[0074] (2) adopt PECVD method to prepare the SiN passivation film of 100nm on the back side of P-type silicon wafer 100, afterwards on the SiN passivation film, use such as image 3 The mask plate 410 shown is used to uniformly print 0.1 g of the first aluminum paste doped with glass powder, and then place it in an oven at 200° C. for drying treatment to obtain an aluminum back field precursor.

[0075] (3) using such as Figure 4 In another mask 420 shown, 0.5 ...

Embodiment 2

[0080] A kind of preparation method of back passivation solar cell, its preparation process is substantially the same as the preparation process of embodiment 1, the difference is that the shape of the mask for printing the first aluminum paste is different, that is, adopt such as Figure 5 A reticle 430 is shown for masking.

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Abstract

The invention relates to a back passivation solar cell and a preparation method thereof. The back passivation solar cell comprises a P-type silicon wafer, a positive electrode, a passivation film, analuminum slurry layer, a back electrode and a plurality of aluminum back fields arranged at intervals. The positive electrode is arranged on the front surface of the P-type silicon wafer. The passivation film is arranged on the back surface of the P-type silicon wafer. The aluminum slurry layer is arranged on the surface of the passivation film. The back electrode is arranged on the surface of thealuminum slurry layer. The aluminum back fields are formed by etching the aluminum slurry. The aluminum back fields are uniformly distributed in the passivation film. The aluminum back fields penetrate through the passivation film and connect the aluminum slurry layer with the P-type silicon wafer. Compared with the battery prepared by the conventional laser slotting process, the back passivationsolar cell has small damage to the passivation film and good passivation effect, thereby improving the photoelectric conversion efficiency of the back passivation solar cell.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a back passivated solar cell and a preparation method thereof. Background technique [0002] Crystalline silicon solar cell is a device that effectively absorbs solar radiation energy and converts light energy into electrical energy by using the photovoltaic effect. It is widely used because of its advantages of no need to consume dyes, safety and environmental protection. [0003] However, the traditional back-passivated crystalline silicon solar cells are mostly prepared by laser slotting technology, that is, laser slotting is performed on the silicon wafer deposited with a passivation film to form multiple slot lines, and then aluminum paste is printed in the slot lines. After drying and sintering, the aluminum paste forms an aluminum back field in contact with the silicon wafer, and the aluminum back field leads out the current. The disadvantage of the laser grooving method is t...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/049H01L31/18
CPCH01L31/022441H01L31/049H01L31/1876Y02E10/50Y02P70/50
Inventor 张子森王伟董建文吕加先沈贞东叶权华魏文文盛健张淳
Owner GCL SYST INTEGRATION TECH