Low dielectric constant polyimide film and preparation method thereof

A technology of polyimide film and low dielectric constant, which is applied in the field of low dielectric constant polyimide film and its preparation, can solve problems such as environmental pollution, complicated process, and lower PI density, so as to achieve no pollution to the environment, Effect of cost reduction and process simplification

Inactive Publication Date: 2019-10-22
CHONGQING UNIV OF ARTS & SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, there are generally two ways to prepare low dielectric constant PI: the first method is to reduce the polarizability of molecules, that is, to reduce the polarity of PI itself, such as using fluorine-containing diamine or dianhydride monomers to synthesize fluorine-containing PI However, the synthesis process of fluorine-containing polyimide is complex, the choice of raw materials is small, the cost is high, and it is not suitable for large-scale production and use; the second method is to reduce the number of polarized molecules per unit volume of the material , that is, to reduce the density of PI itsel

Method used

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  • Low dielectric constant polyimide film and preparation method thereof
  • Low dielectric constant polyimide film and preparation method thereof
  • Low dielectric constant polyimide film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] In this embodiment, the low dielectric constant polyimide film material has the following structural formula:

[0024]

[0025] Under the condition of 25°C, dissolve 10.0g (0.05mol) 4,4'-diaminodiphenyl ether (ODA) in 100ml N,N-dimethylformamide DMF solvent, and then add 10.9g1,2 ,4,5-Pyromellitic dianhydride (PMDA) was subjected to polycondensation reaction (the molar ratio of ODA to PMDA was 1:1), and at the same time, 2g of aluminum triacetylacetonate was added for in-situ mixing, and the resulting mixed solution was stirred at room temperature Reaction 5h, obtain the mixed solution of polyimide precursor PAA and aluminum triacetylacetonate (AACA), i.e. PAA / AACA / DMF; PAA / AACA / DMF solution is carried out defoaming treatment, then this solution is evenly coated on The clean glass plate is placed in an oven for high-temperature thermal imidization treatment to obtain the low dielectric constant polyimide film.

[0026] In the above preparation method, the parameters...

Embodiment 2

[0028] In this embodiment, the low dielectric constant polyimide film material has the following structural formula:

[0029]

[0030] At 25°C, 5.4g (0.05mol) of p-phenylenediamine (PPD) was dissolved in 100ml of N,N-dimethylformamide DMF solvent, and then 14.7g of 3,3',4,4'- Biphenyltetracarboxylic dianhydride (BDPA) was subjected to polycondensation reaction (the molar ratio of PPD to BDPA was 1:1), and at the same time, 1g of aluminum triacetylacetonate was added for in-situ mixing, and the resulting mixed solution was stirred and reacted at room temperature for 5h to obtain A mixed solution of polyimide precursor PAA and aluminum triacetylacetonate (AACA), that is, PAA / AACA / DMF; defoaming the PAA / AACA / DMF solution, and then coating the solution evenly on a clean glass plate put into an oven for high-temperature thermal imidization treatment to obtain the low dielectric constant polyimide film.

[0031] In the above preparation method, the parameters of the high-tempera...

Embodiment 3

[0033] In this embodiment, the low dielectric constant polyimide film material has the following structural formula:

[0034]

[0035] Under the condition of 25°C, dissolve 20.5g (0.05mol) of 2,2-bis[4-(4-aminophenoxy)phenyl]propane (BAPP) in 250ml of N,N-dimethylformamide DMF solvent In, then add 16.1g3,3',4,4'---benzophenonetetraacid dianhydride (BTDA) for polycondensation reaction (the molar ratio of PPD and BDPA is 1:1), and at the same time add 3g triacetyl Aluminum acetonate is mixed in situ, and the resulting mixed solution is stirred and reacted at room temperature for 4h to obtain a mixed solution of polyimide precursor PAA and aluminum triacetylacetonate (AACA), namely PAA / AACA / DMF; for PAA / AACA / DMF The solution is subjected to defoaming treatment, and then the solution is evenly coated on a clean glass plate, and placed in an oven for high-temperature thermal imidization treatment to obtain the low dielectric constant polyimide film.

[0036] In the above prepar...

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Abstract

The invention discloses a low dielectric constant polyimide film and a preparation method thereof. The preparation method comprises: taking a certain amount of aluminum acetylacetonate, uniformly dispersing in a synthesized polyamic acid solution, paving by using the obtained composite resin solution to form a film, and carrying out thermal imidization to prepare the low dielectric constant polyimide film. Compared with the prior art, the method of the present invention has the following characteristics that aluminum acetylacetonate is used as the pore-forming agent, and can be sublimated andvolatilized during the thermal imidization of polyimide, such that the holes are left in the polyimide matrix, and the hole forming process is simple, easy-performing, safe and environmentally friendly; and the prepared low dielectric constant polyimide film has characteristics of uniform air hole distribution, low dielectric constant and good mechanical property, and has good application prospects in the fields of electronics, microelectronics, and the like.

Description

technical field [0001] The invention relates to the technical field of polyimide materials, in particular to a low dielectric constant polyimide film and a preparation method thereof. Background technique [0002] Polyimide (PI) is the most important product among aromatic heterocyclic polymers. It has excellent comprehensive properties such as high temperature resistance, high mechanical strength, chemical stability, and good dimensional stability. It is widely used in aerospace, electrical, microelectronics and other industries. be widely used. With the rapid development of the electronics and microelectronics industry, the integration of electronic components is getting higher and higher, requiring the dielectric to have a lower dielectric constant. Polyimide is widely used in the microelectronics industry. However, the dielectric constant of ordinary imide is 3.2-3.9, which is difficult to meet the needs of future microelectronics technology development. Therefore, the...

Claims

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Application Information

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IPC IPC(8): C08J9/26C08J5/18C08L79/08
CPCC08J5/18C08J9/26C08J2201/0422C08J2379/08
Inventor 李璐柏栋宇李科李颖程江
Owner CHONGQING UNIV OF ARTS & SCI
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