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Method for controlling growth of graphene nanocrystalline carbon film by adjusting irradiation density of ECR ions

A technology of ion irradiation and density control, applied in the direction of ion implantation plating, sputtering plating, metal material coating process, etc., can solve the problem of poor wear resistance, inconvenient contact surface application, low hardness of graphene nanocrystalline carbon film, etc. problem, to achieve the effect of good mechanical and tribological properties

Active Publication Date: 2019-11-01
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for adjusting the ECR ion irradiation density to control the growth of graphene nanocrystalline carbon film, aiming to solve the problem that the prior art prepares by adjusting the ECR electron irradiation density method. Graphene nanocrystalline carbon film has low hardness, poor wear resistance, and technical problems that are inconvenient for application on contact surfaces

Method used

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  • Method for controlling growth of graphene nanocrystalline carbon film by adjusting irradiation density of ECR ions
  • Method for controlling growth of graphene nanocrystalline carbon film by adjusting irradiation density of ECR ions
  • Method for controlling growth of graphene nanocrystalline carbon film by adjusting irradiation density of ECR ions

Examples

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Effect test

Embodiment 1

[0052] 1) Put a 25 mm×25 mm P-type Si substrate into a beaker filled with absolute ethanol, clean it with an ultrasonic instrument, wipe the surface of the substrate with a cleaning cloth dipped in acetone, and let it dry naturally Finally, fix it on the substrate holder with clips and load it into the film forming chamber; wait for the mechanical pump and molecular pump to pump the system vacuum to 7×10 -5 ~8×10 -5 Pa, and then into the argon to stabilize the pressure at 0.04 Pa; the first and second magnetic coils respectively apply 32 A and 34 A current to generate a magnetic field, and introduce microwaves with a microwave power of 700W to couple with the magnetic field to generate plasma, which is stable 10 minutes.

[0053] Before starting the deposition, apply a bias voltage of -50 V on the substrate, and use argon ions to bombard the surface of the substrate for cleaning for 2 to 4 minutes, and turn off the bias voltage after completion; then apply a bias voltage of ...

Embodiment 2

[0057] 1) Put a 25 mm×25 mm P-type Si substrate into a beaker filled with absolute ethanol, clean it with an ultrasonic instrument, wipe the surface of the substrate with a cleaning cloth dipped in acetone, and let it dry naturally Finally, fix it on the substrate holder with clips and load it into the film forming chamber; wait for the mechanical pump and molecular pump to pump the system vacuum to 7×10 -5 ~8×10 -5 At Pa, argon gas was introduced to stabilize the pressure at 0.04 Pa; currents of 32 A and 34 A were applied to the first and second magnetic coils respectively, and a current of 20 A was applied to the third magnetic coil to generate a magnetic field, and the microwave power introduced was A 700 W microwave is coupled with a magnetic field to generate plasma, which is stable for 10 minutes.

[0058] Before starting the deposition, apply a bias voltage of -50 V on the substrate, and use argon ions to bombard the surface of the substrate for cleaning for 2 to 4 mi...

Embodiment 3

[0062] 1) Put a 25 mm×25 mm P-type Si substrate into a beaker filled with absolute ethanol, clean it with an ultrasonic instrument, wipe the surface of the substrate with a cleaning cloth dipped in acetone, and let it dry naturally Finally, fix it on the substrate holder with clips and load it into the film forming chamber; wait for the mechanical pump and molecular pump to pump the system vacuum to 7×10 -5 ~8×10 -5 At Pa, the argon gas was introduced again to stabilize the pressure at 0.04 Pa; the first and second magnetic coils were respectively applied with 32 A and 34 A currents, and the third magnetic coil was applied with 48 A current to generate a magnetic field, and the microwave power introduced was A 700 W microwave is coupled with a magnetic field to generate plasma, which is stable for 10 minutes.

[0063] Before starting the deposition, apply a bias voltage of -50 V on the substrate, and use argon ions to bombard the surface of the substrate for cleaning for 2 t...

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Abstract

The invention provides a method for controlling the growth of graphene nanocrystalline carbon film by adjusting the irradiation density of ECR ions. According to the method, an ECR plasma sputtering system is utilized, the current of a third magnetic coil is adjusted to be changed within the range of 0-48A, argon ions are restrained by adopting a transition magnetic field mode, and a certain working pressure and microwave power are combined, so that the ion irradiation density in the preparation process of the carbon film is further changed. Nano-indentation and nano-scratching tests are carried out on the carbon films prepared under different ion irradiation densities, and when the current of the third magnetic coil varied from 0 A to 48 A, the ion irradiation density can vary from 1.88 mA / cm<2> to 26.89 mA / cm<2>, therefore, the graphene nanocystalline carbon film influenced by the ion irradiation densities within the range has the average size of the graphene nanocystalline from 0.66nm to 1.19 nm, the hardness from 6.45 GPa to 14.53 GPa, the elastic modulus from 116.30 GPa to 179.28 GPa, the friction coefficient from 0.07 to 0.38, and the scratch depth from 2.78 nm to 6.36 nm, and and has better mechanical and tribological properties.

Description

technical field [0001] The invention relates to the technical field of graphene nanocrystalline carbon film preparation, in particular to a method for controlling the growth of graphene nanocrystalline carbon film by adjusting the irradiation density of ECR ​​ions. Background technique [0002] Contains sp 2 The carbon film of nanocrystalline graphene is widely used in various fields such as micromechanics, electronic components, optical devices and biological films due to its good mechanical, electrical, magnetic and optoelectronic integration properties. In particular, the discovery of structures such as graphene makes it possible to obtain extremely high hardness and good electrical conductivity on the surface of carbon nanometers. However, the slip between graphene layers reduces the shear modulus. For feature integration, graphene layers can be bent or sp 3 The bonded structures are connected to form graphene nanocrystalline embedded carbon films for application in n...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0605C23C14/357
Inventor 范雪胡泽龙刁东风
Owner SHENZHEN UNIV
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