GaN-based semiconductor light emitting device having AlGaN interposer and manufacturing method thereof

Abstract

The invention discloses a GaN-based semiconductor light emitting device having an AlGaN interposer and a manufacturing method thereof. The semiconductor light emitting device includes a quantum well structure, wherein the quantum well structure includes at least one set of gallium nitride quantum barriers and indium gallium nitride quantum wells, and each set of gallium nitride quantum barriers and indium gallium nitride quantum wells includes at least a layer of aluminum gallium nitride insertion layer. The semiconductor light emitting device is advantaged in that the aluminum gallium nitrideinsertion layer is utilized between the gallium nitride quantum barriers and the indium gallium nitride quantum wells of the quantum well structure, obtaining atomic level flat surfaces on the gallium nitride quantum barriers, improving interface steepness and eliminating V-shaped defects are not only facilitated, device leakage is reduced, light emitting uniformity is improved, but also balancing the stress accumulated during growth of the indium gallium nitride quantum wells is further facilitated, dislocation of quantum well materials due to accumulation of strain energy is reduced, and thereby improvement of the quality of material forming is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to the field of gallium nitride (GaN) optoelectronic devices, and relates to a gallium nitride-based semiconductor light-emitting device with an aluminum gallium nitride (AlGaN) insertion layer and a manufacturing method thereof. Background technique [0002] GaN-based optoelectronic devices have been widely used in lighting, display and other fields. As the active region of the visible light device, InGaN / GaN MQW is the core of the whole device. [0003] Due to the low suitable growth temperature of indium gallium nitride materials, gallium nitride quantum barriers can only be grown at relatively low temperatures. The resulting V-shaped defects and interface fluctuations will cause the quantum well / barrier interface to be uneven and increase the current. Leakage, reduced uniformity of light emission. [0004] For example, in GaN-based lasers, the unevenness of the i...

AI Technical Summary

Problems solved by technology

[0003] Due to the low suitable growth temperature of indium gallium nitride materials, gallium nitride quantum barriers can only be grown at relatively low temperatures. The resulting V-shaped defects and interface fluctuations will cause the quantum well / barrier interface to be uneven and increase the current. Leakage, reduced luminous uniformity

[0004] For example, in GaN-based lasers, the unevenness of the interface can cause problems such as broadening of the gain spectrum, increased threshold current, and decreased slope efficiency

At present, the current gallium nitride-based optoelectronic devices generally have such problems, which seriously affect the luminous effect

Images