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Method of preparing large-area uniform CIGS thin film solar cell by using In-GA alloy evaporation source

An evaporation source, large-area technology, used in photovoltaic power generation, vacuum evaporation coating, circuits, etc., to achieve uniformity and stability.

Active Publication Date: 2019-11-05
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual production process, the production speed of CIGS films is much higher than the set value in the laboratory, so it is impossible to achieve uniform distribution of In / Ga elements by reducing the production speed and prolonging the growth time. Improving the uniformity of In and Ga elements under the conditions of evaporation speed and ultra-fast growth time is the key technology that must be solved to obtain high-efficiency CIGS in the production line

Method used

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  • Method of preparing large-area uniform CIGS thin film solar cell by using In-GA alloy evaporation source
  • Method of preparing large-area uniform CIGS thin film solar cell by using In-GA alloy evaporation source
  • Method of preparing large-area uniform CIGS thin film solar cell by using In-GA alloy evaporation source

Examples

Experimental program
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Effect test

Embodiment 1

[0056] A method for preparing a large-area uniform CIGS thin-film solar cell using an In-Ga alloy evaporation source. After the soda-lime glass substrate deposited with a molybdenum back electrode layer enters the evaporation source chamber, a one-step co-evaporation process is adopted:

[0057] In a selenium atmosphere, gallium, copper and indium are co-evaporated to deposit selenium, gallium, copper and indium on the substrate. The evaporation source of gallium and indium is an indium gallium alloy source. The evaporation temperature of the indium alloy source and the indium gallium alloy source is controlled at 800-1200°C, the selenium atmosphere is formed by evaporating elemental selenium, and the temperature of evaporating elemental selenium is controlled at 300-650°C; elemental copper is used as the evaporation source of copper, and the evaporation of copper The temperature is controlled at 1000-1500°C.

[0058] The speed of the substrate after entering the evaporation s...

Embodiment 2

[0063] A method for preparing a large-area uniform CIGS thin-film solar cell using an In-Ga alloy evaporation source. After the soda-lime glass substrate deposited with a molybdenum back electrode layer enters the evaporation source chamber, a two-step co-evaporation process is adopted:

[0064] Step 1: co-evaporate gallium and indium in a selenium atmosphere to deposit selenium, gallium and indium on the substrate;

[0065] Step 2: Copper is evaporated in a selenium atmosphere, so that selenium and copper are deposited on the substrate.

[0066] The evaporation source of gallium and indium is an indium-gallium alloy source. The indium-gallium alloy source includes a gallium-rich alloy source and an indium-rich alloy source. The evaporation temperature of the indium-gallium alloy source is controlled at 800-1200°C. The temperature of elemental selenium is controlled at 300-650°C; elemental copper is used as the evaporation source of copper, and the evaporation temperature of c...

Embodiment 3

[0075] A method for preparing a large-area uniform CIGS thin-film solar cell using an In-Ga alloy evaporation source. After the soda-lime glass substrate deposited with a molybdenum back electrode layer enters the evaporation source chamber, a three-step co-evaporation process is adopted:

[0076] Step 1: co-evaporate gallium and indium in a selenium atmosphere to deposit selenium, gallium and indium on the substrate;

[0077] Step 2: In a selenium atmosphere, evaporate copper to deposit selenium and copper on the substrate;

[0078] Step 3: co-evaporating gallium and indium in a selenium atmosphere to deposit selenium, gallium and indium on the substrate.

[0079] The evaporation source of gallium and indium is an indium-gallium alloy source. The indium-gallium alloy source includes a gallium-rich alloy source and an indium-rich alloy source. The evaporation temperature of the indium-gallium alloy source is controlled at 800-1200°C. The temperature of elemental selenium is c...

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Abstract

The invention discloses a method of preparing a large-area uniform CIGS thin film solar cell by using an In-GA alloy evaporation source. An In-GA mixed metal evaporation source is used to replace theconventional In and GA metal sources, so that the In and GA metals are mixed in a specific proportion before evaporation. The predictive empirical formula of In / GA spray proportion of the mixed metalliquid during high-temperature evaporation is obtained by experiments, and it is thus ensured that the In and GA metals form a CIGS film on the surface of a substrate according to the designed composition proportion. Therefore, the stability of long-time large-area coating of the In-GA mixed source and the uniformity of In and GA metal distribution in the CIGS film are realized.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cell production, in particular to a method for preparing a large-area uniform CIGS thin-film solar cell by using an In-Ga alloy evaporation source. Background technique [0002] The metal source evaporation method is one of the most commonly used production techniques for preparing CIGS thin film solar cells. At present, there are mainly three kinds of stable and mature CIGS absorption layer process technologies: one-step co-evaporation, two-step co-evaporation and three-step co-evaporation; these technologies are widely used in the production lines of flexible and rigid CIGS thin film solar cells and modules Among them, Solibro and Manz in Germany, Global Solar Energy and Ascent in the United States, Empa and Flisom in Switzerland all use co-evaporation technology to produce rigid and flexible CIGS components. [0003] In the CIGS co-evaporation process, four raw materials or mixtures of...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/02H01L31/032H01L31/0392C23C14/06C23C14/24
CPCC23C14/0021C23C14/0623C23C14/24H01L21/02422H01L21/02568H01L21/02631H01L31/0322H01L31/03923H01L31/18Y02E10/541Y02P70/50
Inventor 刘宽菲张卫彪任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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