Method of preparing large-area uniform CIGS thin film solar cell by using In-GA alloy evaporation source
An evaporation source, large-area technology, used in photovoltaic power generation, vacuum evaporation coating, circuits, etc., to achieve uniformity and stability.
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[0055] Example 1:
[0056] A method for preparing a CIGS thin film solar cell with large area uniformity using an In-Ga alloy evaporation source. After the soda lime glass substrate deposited with the molybdenum back electrode layer enters the evaporation source chamber, a one-step co-evaporation process is adopted:
[0057] In a selenium atmosphere, gallium, copper, and indium are vaporized together to deposit selenium, gallium, copper, and indium on the substrate. The evaporation source of gallium and indium uses an indium gallium alloy source. The indium gallium alloy source includes a gallium-rich alloy source and a rich source. Indium alloy source, the evaporation temperature of the indium gallium alloy source is controlled at 800-1200℃, the selenium atmosphere is formed by evaporating elemental selenium, and the temperature of evaporating elemental selenium is controlled at 300-650℃; elemental copper is used as the evaporation source of copper, and the evaporation of copper T...
Example Embodiment
[0062] Example 2:
[0063] A method for preparing a CIGS thin film solar cell with large area uniformity using an In-Ga alloy evaporation source. After the soda lime glass substrate deposited with the molybdenum back electrode layer enters the evaporation source chamber, a two-step co-evaporation process is adopted:
[0064] Step 1: In a selenium atmosphere, gallium and indium are vaporized together to deposit selenium, gallium and indium on the substrate;
[0065] Step 2: In a selenium atmosphere, evaporate copper to deposit selenium and copper on the substrate.
[0066] The evaporation source of gallium and indium uses an indium gallium alloy source. The indium gallium alloy source includes a gallium-rich alloy source and an indium-rich alloy source. The evaporation temperature of the indium-gallium alloy source is controlled at 800-1200°C. The selenium atmosphere is formed by evaporating elemental selenium. The temperature of elemental selenium is controlled at 300-650℃; elemental ...
Example Embodiment
[0074] Example 3:
[0075] A method for preparing a CIGS thin film solar cell with large area uniformity using an In-Ga alloy evaporation source. After the soda lime glass substrate deposited with the molybdenum back electrode layer enters the evaporation source chamber, a three-step co-evaporation process is adopted:
[0076] Step 1: In a selenium atmosphere, gallium and indium are vaporized together to deposit selenium, gallium and indium on the substrate;
[0077] Step 2: In a selenium atmosphere, evaporate copper to deposit selenium and copper on the substrate;
[0078] Step 3: In a selenium atmosphere, gallium and indium are vaporized together to deposit selenium, gallium and indium on the substrate.
[0079] The evaporation source of gallium and indium uses an indium gallium alloy source. The indium gallium alloy source includes a gallium-rich alloy source and an indium-rich alloy source. The evaporation temperature of the indium-gallium alloy source is controlled at 800-1200°C. T...
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