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Etching composition for silicon nitride and method of etching using same

A composition, silicon nitride technology, applied in chemical instruments and methods, surface etching compositions, electrical components, etc., can solve problems such as difficulty in maintaining processing stability

Active Publication Date: 2022-04-12
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, phosphoric acid is a corrosive substance and promotes by-products such as Si(OH) 4 etc., making it difficult to maintain processing stability during etching

Method used

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  • Etching composition for silicon nitride and method of etching using same
  • Etching composition for silicon nitride and method of etching using same
  • Etching composition for silicon nitride and method of etching using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 6 and comparative Embodiment 1 to 3

[0053] An etching composition for silicon nitride was prepared by mixing the components listed in Table 1 with water, and properties of the etching composition were evaluated by the following methods.

[0054] Table 1

[0055]

[0056]

[0057] The etching compositions prepared in Examples and Comparative Examples were evaluated with respect to the following properties, and the results are shown in Table 2.

[0058] (1) Etching rate for silicon nitride layer The etching composition was placed in a beaker and heated to 165°C. Then, the SiN film was placed therein and etched using the heated etching composition for 30 minutes, and then the etching rate was calculated by measuring the thickness difference before and after etching.

[0059] (2) Etching rate for silicon oxide layer The etching rate for the silicon oxide layer was measured by the same method as evaluating the etching rate for the silicon nitride layer (except that a SiO film was used instead of the SiN fi...

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Abstract

An etching composition for silicon nitride and a method of etching using the same. The etching composition comprises: phosphoric acid compound; substituted or unsubstituted C 7 to C 8 cyclic hydrocarbons; and water. The etching composition has high selectivity to the silicon nitride layer, and can suppress the precipitation of silicon compounds.

Description

[0001] Citations to related applications [0002] This application claims the benefit of Korean Patent Application No. 10-2018-0051448 filed with the Korean Intellectual Property Office on May 3, 2018, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to an etching composition for silicon nitride and a method of etching using the same. More particularly, the present invention relates to an etching composition for silicon nitride, which can improve etching rate and etching selectivity for a silicon nitride layer while suppressing precipitation of by-products during etching, and a method of etching using the same. Background technique [0004] Silicon oxide layers and silicon nitride layers are used as representative insulating layers in semiconductor manufacturing processes. This insulating layer is used in the form of a single layer or multiple layers. In addition, the silicon oxide layer and the sili...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K13/06
CPCC09K13/06H01L21/30604
Inventor 崔正敏赵娟振黄基煜高尚兰
Owner SAMSUNG SDI CO LTD