Xylene gas sensor based on CoWO4-Co3O4 heterojunction nanostructure sensitive material, and preparation method thereof

A COWO4-CO3O4, gas sensor technology, applied in the direction of material electrochemical variables, etc., can solve the problems of less original form of sensing application, low response, etc., achieve the effect of lower detection limit of gas concentration, simple synthesis method, and low cost

Active Publication Date: 2019-11-15
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But since p-type semiconductor oxide gas sensors generally have a lower response than n-type semiconductor oxide gas sensors

Method used

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  • Xylene gas sensor based on CoWO4-Co3O4 heterojunction nanostructure sensitive material, and preparation method thereof
  • Xylene gas sensor based on CoWO4-Co3O4 heterojunction nanostructure sensitive material, and preparation method thereof
  • Xylene gas sensor based on CoWO4-Co3O4 heterojunction nanostructure sensitive material, and preparation method thereof

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Embodiment 1

[0044] use CoWO 4 -Co 3 o 4 Heterojunction nanostructures are used as sensitive materials to make xylene sensors. The specific manufacturing process:

[0045] (1) First measure 20mL of deionized water and 20mL of ethylene glycol, pour them into a beaker, and keep stirring;

[0046] (2) 0.50g cobalt acetate tetrahydrate and 0.24g urea are added to the beaker uniformly mixed with deionized water and ethylene glycol; after stirring for 15 minutes, add 0.1g cetyltrimethylammonium bromide, Finally add 0.24g WCl 6 , and keep stirring continuously until it is completely dissolved;

[0047] (3) Transfer the above solution to a hydrothermal kettle, keep it at 160°C for 12 hours, take it out, cool it down to room temperature naturally, wash the resulting precipitate with deionized water and ethanol for several times, and then dry it at room temperature. Calcined at 400 °C for 2 hours to obtain CoWO 4 -Co 3 o 4 Heterojunction Nanostructured Powders.

[0048] (4) Take appropriate...

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Abstract

The invention discloses a xylene gas sensor based on a CoWO4-Co3O4 heterojunction nanostructure sensitive material, and a preparation method thereof, belonging to the technical field of semiconductoroxide gas sensors. The xylene gas sensor is composed of an Al2O3 insulating ceramic tube with two ring-shaped gold electrodes, a semiconductor sensitive material spread on the ring-shaped gold electrodes and the ceramic tube and a nickel-chromium alloy heating coil passing through the ceramic tube. The CoWO4-Co3O4 heterojunction nanostructure sensitive material used for the xylene gas sensor provided by the invention is prepared through a simple hydrothermal method, a P type Co3O4 semiconductor sensitive material is modified through formation of a heterojunction, and thus, greater leap of gassensitivity is realized. The sensor has excellent sensitivity (51.6-100ppm) and lower detection lower limit (0.3ppm) to the xylene. The xylene gas sensor can be prepared through simple technologies, is small in size and suitable for being produced in large batches, and has wide application prospect in the aspect of detection of xylene pollutant in a microenvironment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, in particular to a sensor based on CoWO 4 -Co 3 o 4 Xylene gas sensor of heterojunction nanostructure sensitive material and its preparation method. Background technique [0002] As a typical indoor pollutant, xylene is widely used as a solvent in paint, rubber, leather and other industries. It also exists in gasoline, building decoration materials, etc. Xylene gas will not only pollute the environment but also cause dizziness, headache, skin and eye irritation, memory and nervous system diseases and other hazards when inhaled. Therefore, it is of great significance to develop xylene gas sensors with excellent xylene sensing characteristics. [0003] Among the many kinds of gas sensors, the resistive gas sensor with semiconductor oxide as sensitive material has the advantages of high sensitivity, low detection limit, good selectivity, fast response and recovery speed, ...

Claims

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Application Information

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IPC IPC(8): G01N27/30
CPCG01N27/30
Inventor 孙鹏郭杰卢革宇刘方猛闫旭刘凤敏粱喜双高原
Owner JILIN UNIV
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