Self-sharpening diamond wire for silicon wafer cutting and manufacturing method and using method thereof

Abstract

The invention discloses a self-sharpening diamond wire for silicon wafer cutting and a manufacturing method and using method thereof, and belongs to the field of diamond wires for photovoltaic products. The diamond wire comprises a steel bus, the outer surface of the steel bus is plated with a first pre-growing layer, a second composite positioning layer and a third reinforcing layer, and diamondparticles are fixed by all the plated layers. The manufacturing method comprises the steps: surface pretreatment, nickel pre-plating, first-time nickel plating, second-time nickel plating, third-timenickel plating and treatment after plating. The using method comprises the following steps: the diamond wire after use for cutting is immersed into the lower part of etching liquid, a NaOH solution with the mass concentration being 15%-20% is adopted as the etching liquid, the third reinforcing layer is corroded by the etching liquid, and thus the diamond particles are exposed out of the second composite positioning layer to from a cutting blade. The diamond particles are fixed through the three plated layers, the risk of falling-off of the diamond particles is lowered, and the diamond wire maintains cutting force through treatment.

Description

technical field [0001] The invention belongs to the technical field of diamond wires for photovoltaic products, and in particular relates to a self-sharpening diamond wire for cutting silicon wafers, a manufacturing method and a using method thereof. Background technique [0002] In the existing technology, photovoltaic power generation is a green solution to solve the global energy crisis. Silicon wafer processing is an important part of the photovoltaic industry chain. The current silicon wafer processing technology has gradually changed from the original free abrasive cutting to diamond bonded abrasive. Cutting, diamond cutting has become a common mode of silicon wafer processing, and the diamond particles on the diamond wire endow the diamond wire with cutting force. In the current environment, fine-wire cutting of diamond wire will further reduce the cost of silicon materials, and the research and development of fine-wire cutting of diamond wire has become an important ...

AI Technical Summary

Problems solved by technology

[0003] At present, the wire diameter of diamond wire has experienced a diving development from 180um to 50um. As the wire diameter becomes thinner, the diamond wire itself carries fewer diamond particles, and the cutting ability also decreases; Particles are detected and analyzed by electron microscope SEM, and the analysis and calculation of theoretical and mathematical models are carried out. After the targeted diamond wire diameter is thinned, the diamond wire is prone to produce weak points in the performance of diamond particle failure.

The diamond wire in the prior art has the following deficiencies: First, in the process of cutting silicon wafers by the diamond wire, the wear pattern of the diamond particles on the surface of the diamond wire is irregular, and the entire large diamond particle is easy to fall off or the fracture surface traverses the entire diamond particles, leading to loss of cutting force; the cutting wear of diamond particles is large and takes a long time, resulting in the cutting edge of diamond particles being ground into a circular or arc shape, and the diamond particles attached to the surface of the diamond wire are flush with the surface of the diamond wire, and the diamond Particles no longer stick out, diamond wire loses cutting power

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