Method for improving film uniformity

A thin-film uniformity and thin-film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reduced production efficiency, reduced processing efficiency, waste of raw materials, etc., to reduce production efficiency, improve wettability, reduce The effect of raw material waste

Inactive Publication Date: 2019-11-22
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition to this, the other two methods also have their shortcomings, that is, the higher rotational speed and the longer glue-spinning time can easily cause the spin-coating liquid to be

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving film uniformity
  • Method for improving film uniformity
  • Method for improving film uniformity

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0024] The specific implementation of the present invention will be described in more detail below in conjunction with the schematic diagram. According to the following description and claims, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and all use imprecise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.

[0025] In the following, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or time sequence. It is to be understood that these terms so used can be replaced under appropriate circumstances. Similarly, if the method described herein includes a series of steps, and the order of these steps presented herein is not necessarily the only order in which these steps can be performed, and some of the described ste...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Poweraaaaaaaaaa
Login to view more

Abstract

The invention provides a method for improving the uniformity of a film, and the method comprises the steps: providing a semiconductor, and forming a trench on the surface of the semiconductor; carrying out plasma irradiation treatment on the surface of the semiconductor; dripping spin-coating liquid on the surface of the semiconductor, and rotating the semiconductor at a high speed to enable the spin-coating liquid to be laid on the whole surface of the semiconductor; and forming a stable film on the surface of the semiconductor through heat treatment. According to the method for improving film uniformity, plasma irradiation treatment is carried out before spin-coating liquid is coated on the surface of the semiconductor; the density of hydroxyl (-OH) groups on the surface of the unit areaof the surface of the semiconductor can be increased, and the hydrophilicity/hydrophobicity of the side wall of the groove is changed, so that the wettability between the spin-coating liquid and thesurface of the groove is improved, and the non-uniformity of the thickness of the film caused by high viscosity of the spin-coating liquid and poor wettability to the surface of the groove is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the uniformity of a thin film. Background technique [0002] With the rapid development of integrated circuit technology, the number of transistors that can be carried on a single chip is increasing at an alarming rate; at the same time, chip manufacturers are eager to accommodate more transistors on a single wafer in order to reduce costs. Many chips. These two trends have promoted the integration of semiconductor devices to become higher and higher, and the feature size is smaller and smaller. When the technology node of memory and logic devices reaches 20nm and below, in order to ensure the isolation between devices to avoid mutual interference, the isolation region often needs to form ultra-high aspect ratio trenches with elongated and complex shapes (the aspect ratio is greater than 30 ), which has greatly exceeded the filling capability range...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/306H01L21/3065
CPCH01L21/306H01L21/3065
Inventor 陆神洲张志刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap