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Method for improving film uniformity

A thin-film uniformity and thin-film technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reduced production efficiency, reduced processing efficiency, waste of raw materials, etc., to reduce production efficiency, improve wettability, reduce The effect of raw material waste

Inactive Publication Date: 2019-11-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition to this, the other two methods also have their shortcomings, that is, the higher rotational speed and the longer glue-spinning time can easily cause the spin-coating liquid to be thrown out, which reduces the processing efficiency and wastes raw materials; The spin coating method will increase the process and operation time, and also reduce the production efficiency

Method used

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Embodiment Construction

[0024] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0025] Hereinafter, the terms "first", "second", etc. are used to distinguish between similar elements, and are not necessarily used to describe a specific order or chronological order. It is to be understood that these terms so used are interchangeable under appropriate circumstances. Similarly, if a method described herein includes a series of steps, the order in which these steps are presented is not necessarily the only order in which these steps can be performed, and some described steps may be omitted and / ...

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Abstract

The invention provides a method for improving the uniformity of a film, and the method comprises the steps: providing a semiconductor, and forming a trench on the surface of the semiconductor; carrying out plasma irradiation treatment on the surface of the semiconductor; dripping spin-coating liquid on the surface of the semiconductor, and rotating the semiconductor at a high speed to enable the spin-coating liquid to be laid on the whole surface of the semiconductor; and forming a stable film on the surface of the semiconductor through heat treatment. According to the method for improving film uniformity, plasma irradiation treatment is carried out before spin-coating liquid is coated on the surface of the semiconductor; the density of hydroxyl (-OH) groups on the surface of the unit areaof the surface of the semiconductor can be increased, and the hydrophilicity / hydrophobicity of the side wall of the groove is changed, so that the wettability between the spin-coating liquid and thesurface of the groove is improved, and the non-uniformity of the thickness of the film caused by high viscosity of the spin-coating liquid and poor wettability to the surface of the groove is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for improving the uniformity of a thin film. Background technique [0002] With the rapid development of integrated circuit technology, the number of transistors that can be carried on a single chip is increasing at an alarming rate; at the same time, chip manufacturers are eager to accommodate more transistors on a single wafer in order to reduce costs. Many chips. These two trends have promoted the integration of semiconductor devices to become higher and higher, and the feature size is smaller and smaller. When the technology node of memory and logic devices reaches 20nm and below, in order to ensure the isolation between devices to avoid mutual interference, the isolation region often needs to form ultra-high aspect ratio trenches with elongated and complex shapes (the aspect ratio is greater than 30 ), which has greatly exceeded the filling capability range...

Claims

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Application Information

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IPC IPC(8): H01L21/306H01L21/3065
CPCH01L21/306H01L21/3065
Inventor 陆神洲张志刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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