Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Modification method of electron transport layer for organic solar cell

An electron transport layer, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of complex solar cell preparation process, inability to influence the internal defects of the electron transport layer, etc. Achieve in-situ defect passivation and good compatibility

Active Publication Date: 2019-11-22
TAIYUAN UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the effect of the double-layer structure electron transport layer is similar to that of pyridine compounds in the electrolyte of dye-sensitized solar cells. influences
In addition, the double-layer electron transport layer will inevitably introduce new interface contacts, which will make the preparation process of solar cells more complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Modification method of electron transport layer for organic solar cell
  • Modification method of electron transport layer for organic solar cell
  • Modification method of electron transport layer for organic solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Weigh 1g of zinc acetate dihydrate, 0.28g of ethanolamine into a glass sample bottle, add 9.95mL of 2-methoxyethanol and 0.05mL of 4-tert-butylpyridine, put in a magnet, stir vigorously at room temperature for 12h, until the mixture is uniform , to prepare a modified zinc oxide precursor solution.

[0036] The above-mentioned modified zinc oxide precursor solution was spin-coated on ITO conductive glass at a speed of 4000rpm for 60s to form a thin film, and annealed at 200°C for 1h to obtain a planar modified zinc oxide electron transport layer, which was marked as TBP-ZnO(7.4 :100).

Embodiment 2

[0038] Weigh 1g of zinc acetate dihydrate and 0.28g of ethanolamine into a glass sample bottle, add 9.5mL of 2-methoxyethanol and 0.5mL of 4-tert-butylpyridine, put in a magnet, stir vigorously at room temperature for 12h, until the mixture is uniform , to prepare a modified zinc oxide precursor solution.

[0039] The above-mentioned modified zinc oxide precursor solution was spin-coated on ITO conductive glass at a speed of 4000rpm for 60s to form a thin film, and annealed at 160°C for 0.5h to obtain a planar modified zinc oxide electron transport layer, which was marked as TBP-ZnO ( 74:100).

Embodiment 3

[0041] Weigh 1g of zinc acetate dihydrate and 0.28g of ethanolamine into a glass sample bottle, add 9mL of 2-methoxyethanol and 1mL of 4-tert-butylpyridine, put in a magnet, stir vigorously at room temperature for 12h, until the mixture is uniform, and prepare A modified zinc oxide precursor solution is obtained.

[0042] The above-mentioned modified zinc oxide precursor solution was spin-coated on ITO conductive glass at a speed of 4000rpm for 60s to form a thin film, and annealed at 230°C for 1h to obtain a planar modified zinc oxide electron transport layer, which was marked as TBP-ZnO(148 :100).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a modification method of an electron transport layer for an organic solar cell. The method comprises the following steps: adding a pyridine derivative modifier into a reactionsystem for preparing an n-type semiconductor material by a conventional sol-gel method, preparing an n-type semiconductor precursor solution in situ, spin-coating the n-type semiconductor precursor solution to form a film, and carrying out annealing treatment at 100-400 DEG C to obtain the modified n-type semiconductor material electron transport layer. When the modified n-type semiconductor material electron transport layer is used for preparing an organic solar cell, transmission and extraction of electrons in the solar cell can be promoted, the utilization rate of solar photons by the organic solar cell is improved, and the photoelectric conversion efficiency of the organic solar cell is further improved.

Description

technical field [0001] The invention relates to a method for modifying an electron transport layer for an organic solar cell. The organic solar cell is prepared by using the electron transport layer modified by the method of the invention, which can significantly improve the photoelectric conversion efficiency of the organic solar cell. Background technique [0002] The development of solar cell technology is an important technical means to solve environmental pollution and energy crisis. Due to the potential advantages of low cost, light weight, and large-area flexible devices, organic solar cells have attracted extensive attention from researchers. [0003] In recent years, due to the continuous development of new active layer materials, interface engineering, and device structure design, the efficiency of organic solar cells has been continuously improved, and the photoelectric conversion efficiency has reached 14%. In organic solar cells, the existence of the interface ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K71/40H10K85/341H10K30/152Y02E10/549
Inventor 王忠强郭鹍鹏王华张如芹王宗涛吴月珍
Owner TAIYUAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com