Zinc oxide gas-sensitive film material, preparation method therefor and application of zinc oxide gas-sensitive film material

A zinc oxide film, zinc oxide technology, applied in the direction of zinc oxide/zinc hydroxide, analytical materials, material resistance, etc., can solve the problems of complex reaction system, complex solution system, difficult operation, etc., and achieve simple solution system and simple process. , the effect of low cost

Inactive Publication Date: 2019-11-26
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The reaction system of the above preparation method is complicated, the solution system is complicated, the temperature is high, it is not easy to operate and consumes a lot of energy

Method used

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  • Zinc oxide gas-sensitive film material, preparation method therefor and application of zinc oxide gas-sensitive film material
  • Zinc oxide gas-sensitive film material, preparation method therefor and application of zinc oxide gas-sensitive film material
  • Zinc oxide gas-sensitive film material, preparation method therefor and application of zinc oxide gas-sensitive film material

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Experimental program
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preparation example Construction

[0026] The preparation method of the zinc oxide gas-sensitive film material of the present invention first prepares a ZnO seed crystal film on an electrode substrate to provide an in-situ growth crystal nucleus of a nanostructured zinc oxide film. ZnO seed film can be prepared by sol-gel method, thermal evaporation, sputtering and other methods.

[0027] Then, a zinc oxide precursor solution is prepared from zinc salt and alkali, and the molar ratio of zinc salt to alkali is 0.1-0.3. Zinc salt is Zn(NO 3 ) 2 , Zn(CH 3 COO) 2 , ZnSO 4 , ZnCl 2 One of them; the alkali is one of NaOH, KOH and ammonia water.

[0028] The substrate is immersed in the zinc oxide precursor solution, the solution is kept at 0-25° C. for 0.1-10 hours, and the ceramic substrate is taken out, washed and dried. Nanostructured ZnO films can be grown in situ at room temperature.

Embodiment 1

[0030] (1) Weigh a certain amount of KOH and Zn(NO 3 ) 2 , respectively dissolved in distilled water; mixing and stirring the above solutions to obtain a zinc oxide precursor solution;

[0031] (2) Immerse the ceramic substrate covered with the zinc oxide seed crystal film in the zinc oxide precursor solution, and let it stand in a water bath at 25° C. for 2 hours;

[0032] (3) After standing still, take out the ceramic substrate, wash and dry.

[0033] The product prepared in this embodiment is put into a scanning electron microscope to observe, as figure 1 As shown, the prepared nano-zinc oxide film is composed of nano-sheets with a thickness of about 20 nm, and the nano-sheets grow vertically to form a network structure.

Embodiment 2

[0035] (1) Weigh a certain amount of NaOH and ZnSO at a molar ratio of 1:0.2 4 , respectively dissolved in distilled water; mixing and stirring the above solutions to obtain a zinc oxide precursor solution;

[0036] (2) Immerse the ceramic substrate covered with the zinc oxide seed crystal film in the zinc oxide precursor solution, and let it stand in a water bath at 10° C. for 5 hours;

[0037] (3) After standing still, take out the ceramic substrate, wash and dry.

[0038] like figure 2 As shown, the prepared nano-zinc oxide film is composed of nano-sheets with a thickness of about 30 nm, and the nano-sheets grow perpendicular to the substrate to form a network structure.

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Abstract

The invention discloses a zinc oxide gas-sensitive film material, a preparation method therefor and an application of the zinc oxide gas-sensitive film material. A nanostructure zinc oxide film is directly prepared on an electrode substrate by using solution low-temperature in-situ deposition. The prepared nanostructure zinc oxide film has a network-shaped structure formed by nanosheets growing vertical to the substrate. The zinc oxide gas-sensitive film material has the advantages of high efficiency, low cost and simple process and is suitable for being industrially produced. The obtained nanostructure zinc oxide film has a relatively large specific surface area, the problem of agglomeration among nanoparticles can be effectively overcome, and the zinc oxide gas-sensitive film material has good gas-sensitive response to gases such as NO2 and H2S and has an excellent gas-sensitive application prospect.

Description

technical field [0001] The invention relates to the field of preparation of metal oxide film materials, in particular to a zinc oxide gas-sensitive film material, a preparation method and an application thereof. Background technique [0002] With the development of social economy and the improvement of people's living standards, people put forward more and more requirements for the environment they live in, especially the air quality. The detection of low-concentration flammable, explosive and toxic gases indoors and outdoors It is also getting more and more attention. A gas sensor is a sensor that detects a specific gas. It uses the physical and chemical reaction between the gas to be measured and the sensitive material to convert the concentration and composition of the gas to be measured into an electrical signal output, and confirm the gas composition and concentration according to the change of the electrical signal. Resistive gas sensors detect specific gases by usin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02G01N27/12
CPCC01G9/02G01N27/127C01P2004/03
Inventor 王明松晋川川罗强刘桂武乔冠军
Owner JIANGSU UNIV
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