Method for preparing boron-doped diamond by using solid doping source

A boron-doped diamond and doping source technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of unsafe gas boron source, corrosive equipment, etc., and achieve good surface morphology , safe preparation, good conductivity effect

Active Publication Date: 2019-12-03
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the problem that the gas boron source is unsafe and corrosive to equipment in the existing method for preparing boron-doped diamond film, and provides a method for preparing boron-doped diamond using a solid-state doping source

Method used

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  • Method for preparing boron-doped diamond by using solid doping source
  • Method for preparing boron-doped diamond by using solid doping source
  • Method for preparing boron-doped diamond by using solid doping source

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specific Embodiment approach 1

[0022] Specific implementation mode one: combine figure 1 Specifically illustrate this implementation method, a kind of method of utilizing solid-state dopant source to prepare boron-doped diamond in this embodiment mode, it is carried out according to the following steps:

[0023] 1. Preparation of doping sources:

[0024] Grinding and mixing the graphite powder and the boron source to obtain a mixed powder, then putting the mixed powder into a tablet press and pressing it into a disc or a square sheet to obtain a solid dopant source;

[0025] The atomic ratio of the boron element in the boron source to the carbon element in the graphite powder is (0.001~0.1):1;

[0026] The boron source is boron powder or boron oxide powder;

[0027] 2. Preparation of boron-doped diamond film:

[0028] The substrate and multiple solid-state dopant sources are placed on the sample stage of the microwave plasma chemical vapor deposition device, and multiple solid-state dopant sources are ev...

specific Embodiment approach 2

[0035] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the graphite powder described in step 1 has a purity of 99.9%. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0036] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the substrate described in step 2 is a pretreated silicon wafer. Others are the same as in the first or second embodiment.

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Abstract

The invention discloses a method for preparing a boron-doped diamond by using a solid doping source, and relates to a method for preparing the boron-doped diamond. The invention aims to solve the problems of unsafe gas boron source and the corrosivity to the equipment in an existing preparation method of a boron-doped diamond film. The preparation method comprises the following steps of 1, preparing the doping source; and 2, preparing the boron-doped diamond film. The method is used for preparing the boron-doped diamond by utilizing the solid doping source.

Description

technical field [0001] The invention relates to a method for preparing boron-doped diamond. Background technique [0002] Boron-doped diamond has excellent physical and chemical properties, such as low background current, wide potential window, good biocompatibility, electrical conductivity, wear resistance and chemical stability. These excellent properties make boron-doped diamond materials have great application potential in electrochemical analysis, biological detection, sewage treatment, supercapacitors and other fields; the preparation methods of boron-doped diamond materials have also been extensively studied. [0003] At present, the preparation of boron-doped diamond materials mainly adopts the chemical vapor deposition method, using methane as the carbon source, and diborane or trimethyl borate as the boron source. However, diborane is very toxic, which will have a certain impact on the health and personal safety of the operator, and has a relatively large potentia...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/50
CPCC23C16/278C23C16/50
Inventor 朱嘉琦姚凯丽代兵谭小俊杨磊赵继文舒国阳韩杰才
Owner HARBIN INST OF TECH
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