A method for preparing boron-doped diamond using a solid-state doping source

A boron-doped diamond and doping source technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of unsafe gas boron source, corrosive equipment, etc., and achieve safe preparation and operation. simple effect

Active Publication Date: 2021-05-25
HARBIN INST OF TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the problem that the gas boron source is unsafe and corrosive to equipment in the existing method for preparing boron-doped diamond film, and provides a method for preparing boron-doped diamond using a solid-state doping source

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing boron-doped diamond using a solid-state doping source
  • A method for preparing boron-doped diamond using a solid-state doping source
  • A method for preparing boron-doped diamond using a solid-state doping source

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0022]DETAILED DESCRIPTION One: Combinationfigure 1 Specifically, the present embodiment is described, and a method of preparing blended diamonds using a solid-state dopant, it is carried out in the following steps:

[0023]First, the preparation of the doped source:

[0024]The graphite powder and boron sources were ground and mixed, and the mixed powder was obtained, and then the mixed powder was placed in a tablet machine, pressed into a circular or square sheet to obtain a solid-state dopant;

[0025]The amphoteric ratio of boron elements and graphite powder in the boron source is (0.001 to 0.1): 1;

[0026]The boron source is boron powder or boron oxide powder;

[0027]Second, the preparation of blended diamond film:

[0028]Place the substrate and the plurality of solid-state doped sources on the sample table of the microwave plasmon, and a plurality of solid-state dopants are disposed on the periphery of the substrate, and mixed with hydrogen or a mixture of hydrogen and other gases. Gas, then...

specific Embodiment approach 2

[0035]DETAILED DESCRIPTION OF THE INVENTION The present embodiment is different from the specific embodiment: the graphite powder purity according to the step one is 99.9%. Other as the specific embodiment.

specific Embodiment approach 3

[0036]DETAILED DESCRIPTION OF THE INVENTION 3: The present embodiment is different from that of the particular embodiment: the substrate described in step i is a pre-treated silicon. Others are the same as those of the specific embodiments.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
Login to view more

Abstract

A method for preparing boron-doped diamond by using a solid-state doping source, which relates to a method for preparing boron-doped diamond. The invention solves the problem that the gas boron source is unsafe and corrosive to equipment in the prior preparation method of the boron-doped diamond film. Preparation method: 1. preparation of doping source; 2. preparation of boron-doped diamond film. The invention is used for preparing boron-doped diamond by utilizing solid-state doping source.

Description

Technical field[0001]The present invention relates to a method of preparing blended diamonds.Background technique[0002]During boron has excellent physical and chemical properties such as lower background current, wider potential windows, good biocompatibility, conductive properties, wear resistance, and chemical stability. These excellent properties make the blended diamond material in the field of electrochemical analysis, biological detection, sewage treatment, supercapacitor, etc., and have been widely studied for the preparation method of blended diamond materials.[0003]At present, the preparation of boron-doned diamond materials is mainly used by chemical vapor deposition, methane as a carbon source, as a boron source as a boronio or boric acid. However, alkane has a lot of toxicity, which has a certain impact on the operator's physical health, and has a large safety hazard. Once the leakage consequences are more imagined. Trimethyl borate has strong corrosive, long-term use, c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/50
CPCC23C16/278C23C16/50
Inventor 朱嘉琦姚凯丽代兵谭小俊杨磊赵继文舒国阳韩杰才
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap