A method for preparing boron-doped diamond using a solid-state doping source
A boron-doped diamond and doping source technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of unsafe gas boron source, corrosive equipment, etc., and achieve safe preparation and operation. simple effect
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specific Embodiment approach 1
[0022]DETAILED DESCRIPTION One: Combinationfigure 1 Specifically, the present embodiment is described, and a method of preparing blended diamonds using a solid-state dopant, it is carried out in the following steps:
[0023]First, the preparation of the doped source:
[0024]The graphite powder and boron sources were ground and mixed, and the mixed powder was obtained, and then the mixed powder was placed in a tablet machine, pressed into a circular or square sheet to obtain a solid-state dopant;
[0025]The amphoteric ratio of boron elements and graphite powder in the boron source is (0.001 to 0.1): 1;
[0026]The boron source is boron powder or boron oxide powder;
[0027]Second, the preparation of blended diamond film:
[0028]Place the substrate and the plurality of solid-state doped sources on the sample table of the microwave plasmon, and a plurality of solid-state dopants are disposed on the periphery of the substrate, and mixed with hydrogen or a mixture of hydrogen and other gases. Gas, then...
specific Embodiment approach 2
[0035]DETAILED DESCRIPTION OF THE INVENTION The present embodiment is different from the specific embodiment: the graphite powder purity according to the step one is 99.9%. Other as the specific embodiment.
specific Embodiment approach 3
[0036]DETAILED DESCRIPTION OF THE INVENTION 3: The present embodiment is different from that of the particular embodiment: the substrate described in step i is a pre-treated silicon. Others are the same as those of the specific embodiments.
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