Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Forming method of packaging structure

A technology of packaging structure and contact structure, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems that the electromagnetic shielding effect needs to be improved, and achieve the effect of improving efficiency and ensuring integrity

Active Publication Date: 2019-12-03
NANTONG TONGFU MICROELECTRONICS CO LTD
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] An existing electromagnetic shielding solution is mainly to set a magnetic field shielding layer on the semiconductor packaging structure to shield the electromagnetic interference between chips, but the effect of the existing electromagnetic shielding still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Forming method of packaging structure
  • Forming method of packaging structure
  • Forming method of packaging structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] As mentioned in the background, the effect of existing electromagnetic shielding still needs to be improved.

[0038] The study found that the existing magnetic field shielding layer is generally formed by sputtering process. Since the thickness of the semiconductor package structure is generally thick, and the semiconductor package structure is generally rectangular, the semiconductor package structure has multiple corners and the side wall is relatively steep. When the magnetic field shielding layer covering the semiconductor package structure is formed by sputtering, the thickness of the formed magnetic field shielding layer is likely to be uneven, and the edge of the semiconductor package structure may not be covered, thus making it difficult to guarantee the shielding effect of the magnetic field shielding layer.

[0039] To this end, the present invention provides a packaging structure and its forming method. After the functional surfaces of several semiconductor chi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a forming method of a packaging structure. The method comprises the steps of: forming a first shielding layer which wraps the non-functional surfaces and side wall surfaces ofa plurality of semiconductor chips after the functional surfaces of the semiconductor chips are bonded on a carrier plate; forming a second shielding layer on the first shielding layer; forming a plastic package layer on the second shielding layer and the carrier plate between the semiconductor chips; stripping the carrier plate to form a pre-sealing panel, wherein the back surface of the pre-sealing panel exposes the functional surfaces of the semiconductor chips; and forming an external contact structure connected with bonding pads on the back surface of the pre-sealing panel. According to the invention, the second shielding layer is formed on the first shielding layer, and the second shielding layer can cover places with non-uniform thickness and poor edge coverage in the first shielding layer, so that the whole shielding layer formed by the first shielding layer and the second shielding layer is complete, and the shielding effect is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a packaging structure with electromagnetic shielding. Background technique [0002] The rapid development of a new generation of electronic products has promoted the development of integrated circuit packaging in the direction of high density, high frequency, miniaturization, and high integration, and high-frequency chips often generate strong electromagnetic waves, which cause undesirable effects on the inside and outside of the package and the chip. In addition, the density of electronic components is getting higher and higher, and the distance of transmission lines is getting closer and closer, which makes the problem of electromagnetic interference from inside and outside the integrated circuit package more and more serious, and at the same time will reduce the quality and life of integrated circuits. [0003] In electronic equipment and electro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/56H01L21/60H01L23/552H01L23/31
CPCH01L21/561H01L21/568H01L23/3107H01L23/552H01L24/02H01L24/03H01L24/11H01L24/97H01L2224/0231H01L2224/02379H01L2224/0401H01L2224/18
Inventor 陶玉娟
Owner NANTONG TONGFU MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com