Integrated power semiconductor device and manufacturing method thereof

Abstract

The invention provides an integrated power semiconductor device and a manufacturing method thereof. The semiconductor device comprises a longitudinal high-voltage device, a first high-voltage pLDMOS device, a high-voltage nLDMOS device, a second high-voltage pLDMOS device, a low-voltage NMOS device, a low-voltage PMOS device, a low-voltage NPN device and a low-voltage Diode device which are integrated on the same chip. The first high-voltage pLDMOS device, the high-voltage nLDMOS device, the second high-voltage pLDMOS device, the low-voltage NMOS device, the low-voltage PMOS device, the low-voltage NPN device and the low-voltage Diode device are all isolated through media. The first high-voltage pLDMOS device and the high-voltage nLDMOS device adopt a multi-channel design, and the second high-voltage pLDMOS device adopts a single-channel design. The invention provides a partial oxygen burying integration technology, an oxygen burying layer is formed by adopting ion implantation and other modes, the technology can integrate a transverse high-voltage device, the longitudinal high-voltage device and a low-voltage device, and problems of current leakage and crosstalk are avoided. Compared with the transverse high-voltage device, by using the semiconductor device of the invention, an on-resistance is low and an occupied chip area is small.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to an integrated power semiconductor device and a manufacturing method thereof. Background technique [0002] High-voltage power integrated circuits often use the high analog precision of Bipolar transistors, the high integration of CMOS, and the high power or voltage characteristics of DMOS (Double-diffused MOSFET) to integrate Bipolar analog circuits, CMOS logic circuits, CMOS analog circuits and DMOS high-voltage power devices. Monolithically integrated together (referred to as BCD process). BCD process integration technology is a commonly used monolithic integration technology, which can greatly reduce system power loss, improve system performance, save circuit packaging costs and have better reliability. [0003] Lateral high-voltage devices are widely used in high-voltage power integrated circuits because the drain, gate, and source are all on the chip surfa...

AI Technical Summary

Problems solved by technology

Based on the principle of RESURF withstand voltage, we have invented the BCD semiconductor device and its manufacturing technology (patent number: ZL200810148118.3), realizing the monolithic integration of nLIGBT, nLDMOS, low-voltage NMOS, low-voltage PMOS and low-voltage NPN on a single crystal substrate, High-voltage, high-speed, and low-conduction-loss power devices with excellent performance are obtained. Since no epitaxial process is used, the chip has a low manufacturing cost, but problems such as excessive leakage current and crosstalk in the chip cannot be avoided

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