GaN-based fin field effect transistor device and manufacturing method thereof

A fin-type field effect and manufacturing method technology, applied in the field of electronics, can solve the problems of small space for performance improvement and insufficient linearity, and achieve the effects of improving linearity, reducing electric field intensity, and uniform electric field distribution

Inactive Publication Date: 2019-12-13
XIDIAN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0006] A major problem of current GaN-based FinFET devices is still insufficient linearity, which limits its further application; and with the gradual maturity of GaN-based Fin

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  • GaN-based fin field effect transistor device and manufacturing method thereof
  • GaN-based fin field effect transistor device and manufacturing method thereof
  • GaN-based fin field effect transistor device and manufacturing method thereof

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[0044] In order to make the above-mentioned objectives, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0045] The present invention first provides a GaN-based fin field effect transistor device, the structure of which is as figure 1 As shown, it includes a substrate 101, a buffer layer 102, a barrier layer 103, and a passivation layer 104 arranged in sequence, wherein:

[0046] A source 105 is provided on one end of the barrier layer 103, and a drain 106 is provided on the other end;

[0047] The passivation layer 104 is arranged on the barrier layer 103 between the source electrode 105 and the drain electrode 106; an opening is arranged in the middle of the passivation layer 104;

[0048] A plurality of grooves 107 are arranged in the barrier layer 103 region corresponding to the opening; fins 108 are arranged between adj...

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Abstract

The invention provides a GaN-based fin field effect transistor device and a manufacturing method thereof. The device comprises a substrate, a buffer layer, a barrier layer and a passivation layer which are arranged in sequence, wherein a source is arranged at one end of the barrier layer, and a drain is arranged at the other end of the barrier layer; the passivation layer is arranged on the barrier layer between the source and the drain; an opening is formed in the middle of the passivation layer; a plurality of grooves are formed in the barrier layer region corresponding to the opening; finsare arranged between the adjacent grooves; a T-shaped gate is arranged on the passivation layer, and the T-shaped gate covers the groove and the fins; the length of the groove is equal to that of thebottom of the T-shaped gate; the thickness of the fin is equal to the depth of the groove; and the width of the portion, away from the passivation layer, of the groove is larger than the width of theportion, close to the passivation layer, of the groove.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a GaN-based fin field effect transistor device and a manufacturing method thereof. Background technique [0002] GaN (Gallium Nitride), as a semiconductor electronic material with physical properties such as broadband and high saturation speed, has been widely concerned in the field of high-temperature, high-speed, and high-power electronics. AlGaN (aluminum gallium nitride) / GaN HEMTs (high electron mobility transistors) based on GaN materials have very good performance in the field of microwave power devices due to their high concentration of two-dimensional electron gas, high electron mobility and excellent breakdown field strength. Prospects. With the reduction of device size, the short channel effect becomes more and more significant, resulting in the deterioration of device performance. The Fin-Gate Field Effect Transistor (FinFET) controls the channel of the device in...

Claims

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Application Information

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IPC IPC(8): H01L29/10H01L29/78H01L21/336
CPCH01L29/1033H01L29/66522H01L29/66795H01L29/785
Inventor 马晓华何皓张鹏张濛吕玲
Owner XIDIAN UNIV
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