GaN-based fin field effect transistor device and manufacturing method thereof

Abstract

The invention provides a GaN-based fin field effect transistor device and a manufacturing method thereof. The device comprises a substrate, a buffer layer, a barrier layer and a passivation layer which are arranged in sequence, wherein a source is arranged at one end of the barrier layer, and a drain is arranged at the other end of the barrier layer; the passivation layer is arranged on the barrier layer between the source and the drain; an opening is formed in the middle of the passivation layer; a plurality of grooves are formed in the barrier layer region corresponding to the opening; finsare arranged between the adjacent grooves; a T-shaped gate is arranged on the passivation layer, and the T-shaped gate covers the groove and the fins; the length of the groove is equal to that of thebottom of the T-shaped gate; the thickness of the fin is equal to the depth of the groove; and the width of the portion, away from the passivation layer, of the groove is larger than the width of theportion, close to the passivation layer, of the groove.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a GaN-based fin field effect transistor device and a manufacturing method thereof. Background technique [0002] GaN (Gallium Nitride), as a semiconductor electronic material with physical properties such as broadband and high saturation speed, has been widely concerned in the field of high-temperature, high-speed, and high-power electronics. AlGaN (aluminum gallium nitride) / GaN HEMTs (high electron mobility transistors) based on GaN materials have very good performance in the field of microwave power devices due to their high concentration of two-dimensional electron gas, high electron mobility and excellent breakdown field strength. Prospects. With the reduction of device size, the short channel effect becomes more and more significant, resulting in the deterioration of device performance. The Fin-Gate Field Effect Transistor (FinFET) controls the channel of the device in...

AI Technical Summary

Problems solved by technology

[0006] A major problem of current GaN-based FinFET devices is still insufficient linearity, which limits its further application; and with the gradual maturity of GaN-based Fin structure device technology, the improvement of the process has less and less room for performance improvement. Need to improve its structure to further improve its linearity

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