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A high-entropy half-heusler thermoelectric material with low lattice thermal conductivity and its preparation method

A technology of thermoelectric materials and thermal conductivity, which is applied in the direction of thermoelectric device node lead-out materials, thermoelectric device manufacturing/processing, metal processing equipment, etc., which can solve the problem of low lattice, high thermal conductivity, and inability to effectively adjust the ZT value And other issues

Active Publication Date: 2022-02-08
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a high-entropy Half-Heusler thermoelectric material with low lattice thermal conductivity, which has a lower lattice thermal conductivity and a higher ZT value

Method used

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  • A high-entropy half-heusler thermoelectric material with low lattice thermal conductivity and its preparation method
  • A high-entropy half-heusler thermoelectric material with low lattice thermal conductivity and its preparation method
  • A high-entropy half-heusler thermoelectric material with low lattice thermal conductivity and its preparation method

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Embodiment 1

[0025] This embodiment discloses a low-lattice thermal conductivity high-entropy Heusler thermoelectric material, according to the master alloy Zr 0.7 f 0.3 Ni 0.85 PD 0.15 The nominal composition of Sn is batched and smelted, and the atomic percentage of each element is: Zr: 23.3%; Hf: 10%; Ni: 28.3%; Pd: 5%; Sn: 33.3%.

[0026] A further improvement of the present invention is:

[0027] The grain size of the Half-Heusler thermoelectric material with low lattice thermal conductivity obtained after ball milling is 0.5-2 μm.

[0028] A processing method of a low-lattice thermal conductivity high-entropy Heusler alloy, comprising the following steps:

[0029] (1) In the glove box according to the master alloy Zr 0.7 f 0.3 Ni 0.85 PD 0.15 Nominal compositional batching of Sn.

[0030] (2) Melting: Using a magnetic levitation melting furnace, under an argon protective atmosphere (10 4 -10 5 Pa), heat up to 1600-1800°C and keep warm for 3 minutes. In order to ensure the ...

Embodiment 2

[0040] A further improvement of the present invention is:

[0041] A processing method of a low-lattice thermal conductivity high-entropy Heusler alloy, comprising the following steps:

[0042] (1) In the glove box according to the master alloy Zr 0.6 Hf 0.4 Ni 0.8 PD 0.2 Nominal compositional batching of Sn.

[0043] (2) Melting: Using a magnetic levitation melting furnace, under an argon protective atmosphere (10 4 -10 5 Pa), heat up to 1600-1800°C and keep warm for 4 minutes. In order to ensure the uniformity of the structure after smelting, repeat smelting 5 times.

[0044] (3) Ball milling: firstly, use a mortar to roughly grind the ingot into a powder with a particle size of 0.1-1 mm. Then wet ball milling was performed under an argon atmosphere. The ball milling medium is absolute ethanol, the ball-to-material ratio is 20:1, the rotational speed is 600r / min, and the ball milling time is 8h.

[0045] (4) Drying treatment: the powder after suction filtration was ...

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Abstract

The invention provides a high-entropy Half-Heusler thermoelectric material with low lattice thermal conductivity and a preparation method thereof. The general formula of the high-entropy Half-Heusler thermoelectric material with low lattice thermal conductivity is Zr x f 1‑x Ni y PD 1‑y Sn, where x=0.6-0.8, y=0.8-0.9. The present invention has the preparation method of the high-entropy Half-Heusler thermoelectric material of low lattice thermal conductivity comprising the following steps: according to the general formula Zr 0.7 f 0.3 Ni 0.85 PD 0.15 Sn batching and mixing, the mixture is placed in a magnetic levitation melting furnace for melting, the smelted ingot is ground and dried to obtain a powder, and the powder is sintered by discharge plasma sintering technology to obtain a high Entropic Half‑Heusler thermoelectric materials. The high-entropy Half-Heusler thermoelectric material of the present invention has lower lattice thermal conductivity and higher ZT value.

Description

technical field [0001] The invention relates to thermoelectric materials, in particular to a high-entropy Half-Heusler thermoelectric material with low lattice thermal conductivity and a preparation method thereof. Background technique [0002] Thermoelectric materials are functional materials that can directly convert thermal energy to electrical energy. Thermoelectric power generation is an important field of energy conversion technology, which can realize waste heat recovery and power generation, which is expected to alleviate the problem of energy shortage worldwide; thermoelectric refrigeration is an environmentally friendly technology that can be widely used in small-scale fluorine-free and local refrigeration. As we all know, Half-Heusler (half-Hausler) alloys with semiconductor characteristics or Seebeck effect show good application prospects in the field of thermoelectric power generation, and can be used as a typical medium-high temperature thermoelectric material....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C30/04B22F3/105B22F9/04C22C1/04H01L35/20H01L35/34
CPCC22C30/04B22F3/105B22F9/04C22C1/04B22F2009/043H10N10/854H10N10/01B22F2998/10C22C1/02B22F1/142B22F2003/1051C22C1/0458C22C1/0433B22F2999/00C22C27/00C22C16/00B22F2009/042
Inventor 康慧君王同敏杨雄陈宗宁郭恩宇李廷举曹志强卢一平接金川张宇博
Owner DALIAN UNIV OF TECH
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