Single-layer transition metal disulfide flexible photodetector preparation method

A technology of photodetectors and transition metals, applied in circuits, electrical components, semiconductor devices, etc., can solve the problem that hard single-layer transition metal dichalcogenide photodetectors cannot be deformed, and achieve low cost, simple and efficient process , good light transmittance effect

Inactive Publication Date: 2019-12-24
XIAN TECHNOLOGICAL UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the above problems, the present invention discloses a method for preparing a simple single-layer transition metal dichalcogenide flexible photodetector, which solves the problem of traditional hard single-layer transition metal dichalcogenide photoelectric detectors on the basis of reducing the difficulty and cost of the process. The problem that the detector cannot be deformed

Method used

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  • Single-layer transition metal disulfide flexible photodetector preparation method
  • Single-layer transition metal disulfide flexible photodetector preparation method
  • Single-layer transition metal disulfide flexible photodetector preparation method

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Embodiment

[0040]Step 1. Prepare single-layer transition metal dichalcogenides by chemical vapor deposition: first weigh 0.01gMoO 3 (purity ≥ 99.5%) and 0.3g S (purity ≥ 99.5%) are placed in the high temperature zone and low temperature zone of the tube furnace, and the sapphire substrate after ultrasonic cleaning with acetone, alcohol and deionized water for 10min is placed 8cm downstream of the molybdenum source At the high temperature zone, the temperature was increased to 800 °C at 10 °C / min, and the reaction temperature was raised to the reaction temperature under the condition of argon flow rate of 70 sccm, and then kept for 15 min, and finally cooled naturally to room temperature to obtain MoS 2 film material. figure 1 MoS grown on sapphire substrate 2 Optical microscope image of the film, figure 2 is the Raman spectrum of the sample, it can be seen from the figure and The difference is 19.2cm -1 , so the MoS 2 The film is a single layer.

[0041] Step 2. Take a PDMS-1 f...

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Abstract

The invention discloses a single-layer transition metal disulfide flexible photodetector preparation method. The method comprises the steps that first, transition metal oxides and sublimated sulfur are used as raw materials to prepare a single-layer thin film through a chemical vapor deposition method; then a vacuum plating method is used to pattern a metal electrode on a PDMS-1 flexible substratewith a copper mesh as a hard mask; and finally, a single-layer transition metal disulfide film is transferred from a growth substrate to the flexible substrate. During the process, a single-layer transition metal disulfide is first transferred to a PMMA film, and then the side, which is adhered with the single-layer transition metal disulfide film, of the PMMA is attached to PDMS-2. After the PMMA film is dissolved, the PDMS-2 is used as a support layer, and a positioning transfer method is used to transfer the single-layer transition metal disulfide film to the flexible substrate PDMS-1. Thephotodetector provided by the invention exhibits good photosensitivity characteristics, and broadens the application field of single-layer transition metal disulfide photodetectors in flexible electronic equipment.

Description

technical field [0001] The invention relates to the technical field of photodetector preparation, in particular to a method for preparing a single-layer transition metal disulfide flexible photodetector. Background technique [0002] A photodetector is an optoelectronic device that uses the interaction of light and semiconductors to convert an optical signal carrying information into an electrical signal that is easy to recognize and process. With the development of semiconductor device manufacturing technology, the size of photodetectors tends to be miniaturized. Single-layer transition metal dichalcogenides with graphite-like layered structures are characterized by their ultra-high surface-to-volume ratio, excellent electrical and optical properties, flexibility and transparency. properties have received extensive attention. [0003] Flexible optoelectronic devices can still work under a certain range of deformation (bending, folding, twisting, compression or stretching),...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/18
Inventor 坚佳莹岳皎洁董芃凡骆磊白泽文常洪龙坚增运
Owner XIAN TECHNOLOGICAL UNIV
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