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Forming method of memory device

A memory and wet etching technology, applied in the direction of electric solid state devices, semiconductor devices, electrical components, etc.

Active Publication Date: 2020-01-03
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Although the existing methods of forming non-volatile memory are sufficient for their original intended use, they are still not completely satisfactory in all aspects, so the technology of non-volatile memory still has problems to be overcome

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Embodiment Construction

[0033] The following describes the present disclosure more fully with reference to the drawings of the embodiments of the present disclosure. However, the present disclosure can also be embodied in various forms, and should not be limited to the embodiments described herein. The thicknesses of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the following paragraphs will not repeat them one by one.

[0034] Figure 1-Figure 9 is according to some embodiments of the present disclosure, showing the formation of Figure 9 A schematic cross-sectional view of different stages of the memory device 100 .

[0035] like figure 1 As shown, a substrate 101 is provided, and the substrate 101 includes a peripheral circuit area 11 and an array area 12 adjacent to the peripheral circuit area 11 . In some embodiments, the material of the substrate 101 may include silicon, gallium arsenide, g...

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Abstract

The invention provides a forming method of a memory device. The forming method of the memory device comprises the steps of forming a floating gate on a substrate, and forming a control gate on the floating gate. The forming method of the memory device also comprises the steps of forming a mask layer on the control gate, and forming a spacer on the side wall of the mask layer, wherein the spacer covers the side wall of the control gate and the side wall of the floating gate. The forming method of the memory device also comprises the steps of implementing an ion implantation process to implant adopant into an upper part of the spacer, and implementing a wet etching process to expose the side wall of the control gate. The forming method of the memory device has the beneficial effects that awet etching solution is prevented from etching downwards along pores and holes in an oxide, the exposed side wall parts of the control gates have generally the same height, and the electrical properties of the control gate and the floating gate are not affected by implementing the ion implantation process.

Description

technical field [0001] The present invention relates to a method for manufacturing a memory device, in particular to a method for forming a memory device. Background technique [0002] In non-volatile memory, according to whether the data in the memory can be rewritten at any time when using a computer, it can be divided into two types of products, namely read-only memory (ROM) and flash memory (flash memory). Among them, flash memory has gradually become the mainstream technology of non-volatile memory due to its low cost. [0003] Generally, a flash memory includes two gates, the first gate is a floating gate for storing data, and the second gate is a control gate for inputting and outputting data. The floating gate is located below the control gate and is in a "floating" state. The so-called floating refers to surrounding and isolating the floating gate with an insulating material to prevent charge loss. The control gate is connected to a word line (WL) to control the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11517H01L27/11524H10B41/00H10B41/35
CPCH10B41/00H10B41/35
Inventor 卓旭棋杨政达
Owner WINBOND ELECTRONICS CORP
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