Bonding method of ITO splicing type target material

A target and back plate technology, which is applied in the bonding field of ITO splicing targets, can solve problems such as unsatisfactory needs, cracking of ITO targets, troublesome surface cleaning, etc., and achieve proper smearing thickness, tight bonding, and smearing speed fast effect

Inactive Publication Date: 2020-01-10
洛阳丰联科绑定技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this patent does not perform pre-calibration on the backplane. The bonded backplane is deformed due to thermal expansion and contraction during the heating and cooling process, which may easily lead to cracking of the ITO target. The shooting surface is protected, the surface cleaning is troublesome, and it is easy to cause scratches
This patent is to bind an ITO target, and the size of the obtained target is relatively small, which cannot meet the actual needs.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A method for bonding ITO spliceable targets, comprising the following steps:

[0040] (1) Place the backboard on the calibration equipment, and slowly depress the upper pressure rod to make the backboard reversely bend by 2.5mm;

[0041] (2) Fix the back plate processed in step (1) and a steel plate with a thickness of 25mm;

[0042] (3) Paste high-temperature tape on the non-working area of ​​the backplane, and paste tin foil on the sputtering surface of the target;

[0043] (4) Place the target and back plate treated in step (3) on the heating platform, start the heating platform, and after the temperature rises evenly to 180°C, pour the melted indium into the target material and the back indium surface of the back plate, and pour the indium Scrape and cover the surface of the target material and the back plate, and then use an ultrasonic back indium machine to continuously brush the surface of the target material and the back plate for 3 times;

[0044] (5) Pour th...

Embodiment 2

[0051] A method for bonding ITO spliceable targets, comprising the following steps:

[0052] (1) Place the backboard on the calibration equipment, and slowly depress the upper pressure rod to make the backboard reversely bend by 3mm;

[0053] (2) Fix the back plate processed in step (1) and a steel plate with a thickness of 26 mm;

[0054] (3) Paste high-temperature tape on the non-working area of ​​the backplane, and paste tin foil on the sputtering surface of the target;

[0055] (4) Place the target and back plate treated in step (3) on the heating platform, start the heating platform, and after uniformly heating up to 200°C, pour the melted indium into the target material and the back indium surface of the back plate, and pour the indium Scrape and cover the surface of the target material and the back plate, and then use an ultrasonic back indium machine to continuously brush the surface of the target material and the back plate 4 times;

[0056] (5) Pour the melted indi...

Embodiment 3

[0063] A method for bonding ITO spliceable targets, comprising the following steps:

[0064] (1) Place the backboard on the calibration equipment, and slowly press down the upper lever to make the backboard reversely bend by 3.5mm;

[0065] (2) Fix the back plate processed in step (1) and a steel plate with a thickness of 27 mm;

[0066] (3) Paste high-temperature tape on the non-working area of ​​the backplane, and paste tin foil on the sputtering surface of the target;

[0067] (4) Place the target and back plate treated in step (3) on the heating platform, start the heating platform, and after uniformly heating up to 210°C, pour the melted indium into the target material and the back indium surface of the back plate, and pour the indium Scrape and cover the surface of the target material and the back plate, and then use an ultrasonic back indium machine to continuously brush the surface of the target material and the back plate 5 times;

[0068] (5) Pour the melted indium...

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Abstract

The invention belongs to the technical field of ceramic target binding, and particularly relates to a bonding method of an ITO splicing type target material. The method comprises the following steps of preparing a copper back plate and the target material, front correction of the copper back plate, pasting a high-temperature adhesive tape on the back plate, pasting tin paper on the target material, fixing the back plate and a steel plate, metallization of the surface of the back plate, metallization of the surface of the target material, processing of bound indium layer, binding the target material, cooling, removing the high-temperature adhesive tape and the tin paper, ultrasonic flaw detection, polishing, cleaning, packaging, and completing bonding. According to the bonding method, a front correction manner is adopted for the back plate, so that the back plate is reversely bent by a certain amount, the corrected back plate and the steel plate are fixed, the flatness of the back platein the process of temperature rise and fall is guaranteed, cracking of the target material in bonding is prevented, and waste of the target material is caused; the splicing target material of the ITOis bonded, the size of the product is large, and the requirements of the size of the TFT-LCD/OLED liquid crystal panel are met; and the bonding rate of the target material and the copper back plate reaches 98% or above, the flatness is within 1 mm, and the subsequent coating quality is improved.

Description

technical field [0001] The invention belongs to the technical field of bonding ceramic splicing targets, and in particular relates to a bonding method for ITO splicing targets. Background technique [0002] In recent years, flat-panel displays have largely replaced the computer monitor and television markets, which were dominated by cathode ray tubes, and will also greatly increase the market demand for thin-film targets and target bonding. Both flat panel displays and conductive glass are quite large in size, and the width of conductive glass can even reach 3000mm. Therefore, the size of the required sputtering target is also increasing, but the existing ITO target is small in size and cannot meet the requirements, and in the bonding process, due to the different deformation of the copper backplane and the ITO target, The ITO target itself is relatively brittle, the oxidation of the bonding material indium, the fluidity of indium and many other problems make the bonding pr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34
CPCC23C14/3414
Inventor 张雪凤高建杰念雯雯孟红波李金龙
Owner 洛阳丰联科绑定技术有限公司
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