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Preparation method of trench Schottky diode terminal protection structure

A technology of Schottky diodes and protective structures, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of high risk of components being affected by moisture, component failure, and short water vapor intrusion path. It is not easy to reduce the amount of solder Control the risk, improve the ability to resist moisture intrusion, and increase the effect of water vapor intrusion path

Active Publication Date: 2020-01-14
YANGZHOU HY TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Even if the above method is adopted, the intrusion path of water vapor is still relatively short, and the risk of components getting wet is still relatively high
[0004]In addition, the packaging process of the current soldering process is quite mature, but there is still an inaccurate problem in the control of the amount of solder used in soldering. Excessive amount of tin is the problem that most people encounter now. Excessive tin amount overflows to the edge of the die, which easily leads to the generation of a short current path. When the component is activated, a short circuit occurs, resulting in component failure.

Method used

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  • Preparation method of trench Schottky diode terminal protection structure
  • Preparation method of trench Schottky diode terminal protection structure
  • Preparation method of trench Schottky diode terminal protection structure

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0030] A method for preparing a trench type Schottky diode terminal protection structure, comprising the steps of:

[0031] (1) A semiconductor substrate 1 is provided, the semiconductor substrate 1 is a silicon substrate, and an epitaxial layer 2 is grown on the semiconductor substrate 1;

[0032] (2) Set a stepped trench region near the edge of the semiconductor substrate, and use mask etching to form a first stepped trench 11; the number of the first stepped trench 11 is 1-2;

[0033] (3) if figure 2 As shown, a non-silicon dioxide oxide layer 10 is formed on the surface of the first stepped trench 11, preferably non-silicon dioxide (SiO 2 ) Dielectric materials such as silicon nitride (Silicon Nitride, Si 3 N 4 ), silicon nitride can effectively save production costs;

[0034] (4) if image 3 As shown, a low-conductivity metal layer 4 is formed on the silicon nitride layer, and the low-conductivity metal layer 4 is preferably metal tungsten;

[0035] (5) if Figure...

Embodiment 2

[0039] The basic steps of this embodiment are the same as those of Embodiment 1, the difference is that in this embodiment, when the Schottky diode terminal is prepared, the protective structure is prepared at the same time to form the terminal region structure of the semiconductor device with the protective structure. Specifically:

[0040] The semiconductor substrate is divided into two regions, and the step trench region is set near the edge, and the adjacent position is the conduction trench region. After mask etching, the first step trench 11 and a plurality of conduction trenches are obtained at the same time. 13. The so-called "conduction" here means that two or more grooves are connected and communicated in the manufacture of the groove structure; when the grooves are filled with conductive materials, the effect is electrically conduction.

[0041] Such as figure 2 As shown, a non-silicon dioxide oxide layer 10 is formed on the surface of the junction between the s...

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Abstract

The invention discloses a preparation method of a trench Schottky diode terminal protection structure and a product thereof. The preparation method comprises the following steps of: (1) providing a semiconductor substrate, and growing an epitaxial layer on the semiconductor substrate; (2) arranging a stepped trench region at the position, close to the edge, of the semiconductor substrate, and forming a first stepped trench structure by utilizing mask etching; (3) forming a non-silicon dioxide oxide layer on the surface of the first stepped trench structure; (4) forming a low-conductivity metallayer on the non-silicon dioxide oxide layer; (5) forming a second stepped trench structure by using an etching process; and (6) generating TEOS oxide layers in all regions to obtain the final trenchSchottky diode terminal protection structure. According to the invention, the invasion path of water vapor can be effectively prolonged, excessive tin in the welding packaging process is prevented from overflowing to the edge of the crystal grain to form a short-circuit path, and the short-circuit situation during assembly actuation is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a method for pretreatment of a well section and wellbore. Background technique [0002] Silicon-based diodes have been developed for decades, and the current product categories can be divided into general diodes (PNDiode), planar Schottky diodes (Planar Schottky Diode) and trench Schottky diodes. With the increasing requirements for energy efficiency in end applications, diodes with the latter two structures are generally accepted and used in the market because of their lower forward voltage drop (ForwardVoltage Drop, VF) and better conversion efficiency. The advantage of the trench Schottky diode is that, under the same grain size, the trench structure greatly reduces the surface electric field intensity of the component, thereby increasing the reverse voltage of the product. Therefore, in the same reverse voltage product, compared with the planar Schottky d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L29/872
CPCH01L29/66143H01L29/872
Inventor 夏毅伦
Owner YANGZHOU HY TECH DEV