Atomic layer deposition system for high-purity thin film deposition
A technique of atomic layer deposition and thin film deposition, which is applied in the direction of coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of cross-contamination of thin films and achieve the effect of avoiding cross-contamination
Inactive Publication Date: 2020-01-24
江苏迈纳德微纳技术有限公司
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[0003] The purpose of the present invention is to overcome the deficiencies in the prior art, and provide an atomic layer deposition system for high-purity film deposition, which can avoid cross-contamination between different films, and can meet the requirements of multiple precursor source deposition. requirements for a variety of thin films and the ability to deposit multicomponent thin films without cross-contamination
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[0027] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0028] As shown in the figure, the embodiment discloses an atomic layer deposition system for high-purity thin film deposition, which mainly consists of a cabinet 1, a reaction chamber 2, a sample transfer chamber 3, a precursor delivery system, an air extraction system, a plasma Body auxiliary system and supporting control system.
[0029] Such as figure 1 , figure 2 , Figure 7 As shown, the cabinet 1 includes a front cabinet 1.1 and a rear cabinet 1.2, the height of the front cabinet 1.1 is lower than the rear cabinet 1.2; the reaction chamber 2 is installed on the top of the front cabinet 1.1, and the reaction chamber 2 It includes an outer cavity body 2.1 and three inner cavity processing units 2.2, and the three inner cavity processing units 2.2 are distributed in multiple layers in the outer cavity body 2.1.
[0030] Such as Figure 2 to Figure 5 ,...
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The invention relates to an atomic layer deposition system for high-purity thin film deposition. A cabinet comprises a front cabinet body and a rear cabinet body. A reaction cavity is formed in the top of the front cabinet body. The reaction cavity comprises an outer cavity and a plurality of inner cavity processing units. The inner cavity processing units are distributed in multiple layers in theouter cavity. Each inner cavity processing unit comprises an inner cavity, an inner cavity upper cover and an inner cavity heater. The inner cavities and the inner cavity upper covers form a deposition chamber, and the inner cavity heaters are disposed at the bottoms of the inner cavities; each inner cavity processing unit is provided with a precursor delivery system and a suction system correspondingly; and a sample injection transfer cavity is formed in the top of the front cabinet body, a gate valve is arranged between the sample injection transfer cavity and each inner cavity processing unit in the reaction cavity, and a transfer robot device is arranged in the sample injection transfer cavity. The cross-contamination between different thin films can be avoided, meanwhile, the requirements for depositing the multiple thin films by a plurality of precursor sources can be met, and the multi-component thin films can be deposited without generating cross-contamination.
Description
technical field [0001] The invention relates to an atomic layer deposition system for high-purity film deposition, belonging to the technical field of atomic layer deposition. Background technique [0002] Atomic Layer Deposition (ALD) is a special chemical vapor deposition technology, which is a method of alternately feeding precursor source pulses into the reaction chamber and chemically adsorbing on the substrate surface to form a thin film. Due to its unique The principle of self-limiting and self-saturated growth, excellent generality, large-area uniformity and precise film thickness control make it widely used in microelectronics, optics, nanotechnology, energy, catalysis, biomedicine, display, corrosion resistance and protection Applications in fields such as layers have shown explosive growth. ALD technology is first of all a vapor deposition technology that can be equipped with different types of precursor sources to deposit various oxides, nitrides, sulfides, simp...
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IPC IPC(8): C23C16/455
CPCC23C16/45544
Inventor 陆雪强潘晓霞左雪芹
Owner 江苏迈纳德微纳技术有限公司