A method of enlarging the effective area of the active region
An effective area, active area technology, applied in semiconductor devices, electrical components, transistors, etc., can solve the problems of reducing the working performance of SRAM, reducing the effective area of the active area, excessive cleaning, etc., to improve working performance and improve uniformity. the effect of reducing the cleaning time
Active Publication Date: 2022-05-27
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for increasing the effective area of the active region, which is used to solve the problem of immersing the wafer in the chemical solution for a long time during batch cleaning in the prior art, thus causing Excessive cleaning reduces the effective area of the active area and reduces the working performance of SRAM
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[0037] The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0038] see Figure 1 to Figure 4 . It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, and the drawings only show the components related to the present invention rather than the number, shape and number of components in actual implementation. For dimension drawing, the type, quantity and proportion of each component can be arbitrarily changed ...
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The invention provides a method for increasing the effective area of the active region. After the active region is etched and formed, the photoresist is removed and cleaned for a single wafer; wherein the HF solution is cleaned for 90 seconds, the SPM cleaning agent is cleaned for 60 seconds, and the SC1 cleaning agent is cleaned for 30 seconds. SCN cleaning 30s. Clean the single wafer after silicon nitride etching back in the active area; O3 cleaning for 30s; SC1 cleaning agent cleaning for 30s, SCN cleaning agent cleaning for 30s; SC2 cleaning agent cleaning for 15s; single wafer cleaning before the formation of the thin oxide layer in the STI area, O3 cleaning for 30s, HF solution cleaning for 6min; SC1 cleaning agent for 30s, SCN cleaning agent for 30s; SC2 cleaning for 15s. The present invention changes the batch operation mode into a single wafer operation mode, improves the chemical ratio of the cleaning solution, reduces the cleaning time of the wafer, and retains the effective area of the active area on the basis of cleaning the active area, increasing the MOS The device channel width improves the uniformity of SRAM, improves the performance of SRAM, and greatly improves the performance of various MOS devices.
Description
technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for increasing the effective area of an active region. Background technique [0002] An SRAM device is a working unit formed by a combination of several MOS devices. If the uniformity of each device is not high, it will affect the performance of the entire SRAM device. With the development of VLSI technology, the size of MOSFET devices is decreasing, which puts forward higher requirements for photolithography and etching process. With the reduction of MOS devices, the small difference in the size of each device will be amplified and manifested, thereby affecting the performance of the SRAM. On the basis of satisfying the 28nm process node, by improving other process steps and increasing the width of the active region, the channel width of the device can be effectively increased, thereby improving the local variation of the SRAM device and improving t...
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IPC IPC(8): H01L27/11H01L21/8244H01L21/02H10B10/00
CPCH01L21/02057H10B10/12
Inventor 雷海波田明张艳李润领
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD