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Method for growing electron blocking layer in light-emitting diode and light-emitting diode

An electronic blocking layer and light-emitting diode technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of uneven LED light emission, uneven In distribution, and reduced brightness, and achieve improved brightness, electrostatic discharge ESD, The effect of reducing the driving voltage

Active Publication Date: 2021-01-26
EPITOP PHOTOELECTRIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] When the AlGaN structure layer is grown at high temperature, it will affect the quantum well structure, such as causing uneven distribution of In in the quantum well structure, In precipitation and other problems, changing the original quantum well energy level structure, which will cause uneven LED light emission. and decrease in brightness

Method used

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  • Method for growing electron blocking layer in light-emitting diode and light-emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The light-emitting diode of this embodiment is obtained according to the following growth method:

[0056] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0057] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0058] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and ...

Embodiment 2

[0065] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0066] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0067] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and the N-type gallium nitride N-GaN layer with a thickness of 1000nm is grown;

[0068] 4. Control the tempera...

Embodiment 3

[0074] 1. Put the sapphire (Pattern Sapphire Substrate, PSS for short) substrate into the reaction chamber, N 2 :H 2 : NH 3 The flow rate ratio is (0:120:0) liters per minute (Standard Liter per Minute, referred to as SLM), the pressure of the reaction chamber is 200 Torr (Torr), the temperature is raised to 1080 ° C, stabilized for 300 seconds, and the substrate Perform high temperature purification;

[0075] 2. Raise the temperature to 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (75:150:56) SLM, the pressure of the reaction chamber is controlled at 450Torr, the speed of the carrier plate is controlled at 1100 rpm, and a non-doped gallium nitride U-GaN layer with a thickness of 1200nm is grown;

[0076] 3. Keep the temperature at 1050°C, N 2 :H 2 : NH 3 The flow rate ratio is (64:120:50) SLM, the pressure of the reaction chamber is controlled at 200Torr, and the N-type gallium nitride N-GaN layer with a thickness of 1000nm is grown;

[0077] 4. Control the tempera...

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Abstract

The invention provides a method for growing an electron blocking layer in a light-emitting diode and a light-emitting diode. The growth method includes: 1) feeding nitrogen, ammonia, trimethylaluminum, trimethylaluminum, and Methylgallium and trimethylindium, growing the first Al on the quantum well light-emitting layer x In y Ga 1‑x‑y After the N layer, stop feeding the nitrogen, ammonia, trimethylaluminum, trimethylgallium and trimethylindium; 2) feed hydrogen into the reaction equipment to make the first Al x In y Ga 1‑x‑y The N layer is transformed into the first Al x Ga 1‑x N layer; 3) cyclic execution of step 1)-step 2) T times, to obtain electron blocking layer Al x Ga 1‑x N; wherein, 0<x<1, 0<y<1, x>y. The method helps to grow high-quality electron-blocking layers without negatively affecting the quantum well structure.

Description

technical field [0001] The invention relates to a growth method of an electron blocking layer in a light-emitting diode and a light-emitting diode, belonging to the technical field of semiconductor lighting. Background technique [0002] In the process of making the electrodes of light-emitting diodes, in order to improve hole injection, prevent electrons from entering the P-type layer, and reduce leakage, it is necessary to grow a layer of AlGaN on the quantum well structure to block electrons, that is, the AlGaN electron blocking layer. However, during the AlGaN growth process, high temperature growth is required to achieve the required AlGaN crystal quality. [0003] When the AlGaN structure layer is grown at high temperature, it will affect the quantum well structure, such as causing uneven distribution of In in the quantum well structure, In precipitation and other problems, changing the original quantum well energy level structure, which will cause uneven LED light emi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/14H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/14H01L33/32
Inventor 康建焦建军陈向东
Owner EPITOP PHOTOELECTRIC TECH
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