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A manufacturing method of a three-dimensional spiral inductance device, an inductance device and a filter

A technology of inductance device and manufacturing method, which is applied in the direction of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems that the inductance loss is difficult to further reduce, the inductance technology cannot obtain the quality factor, etc., so as to improve performance and meet application needs , the effect of improving the quality factor

Active Publication Date: 2022-04-15
XWAVE TECH (SHANGHAI) CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The embodiment of the present invention provides a method for manufacturing a three-dimensional spiral inductor device, which can solve the technical problems that the prior art inductance technology cannot obtain a better quality factor and the inductance loss is difficult to further reduce

Method used

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  • A manufacturing method of a three-dimensional spiral inductance device, an inductance device and a filter
  • A manufacturing method of a three-dimensional spiral inductance device, an inductance device and a filter
  • A manufacturing method of a three-dimensional spiral inductance device, an inductance device and a filter

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0029] The specific implementation of the present invention will be described in detail below in conjunction with specific embodiments.

[0030] Such as figure 1 As shown, the flow chart of the manufacturing method of the three-dimensional spiral inductance device provided by the embodiment of the present invention, the manufacturing method of the three-dimensional spiral inductance device of the present invention includes:

[0031] Step S101 , carving a capacitor lower plate on the surface of the gallium arsenide block, and setting a first silicon isolation dielectric layer on the surface of the ...

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Abstract

The invention relates to the technical field of passive devices, in particular to a method for manufacturing a three-dimensional spiral inductance device. The method includes: engraving a capacitor lower plate on the surface of the gallium arsenide block, and setting a first silicon isolation dielectric layer on the surface of the capacitor lower plate; engraving a first through hole on the first silicon isolation dielectric layer, The first through hole is connected to the lower plate of the capacitor, and the upper plate of the capacitor is carved on the first silicon isolation dielectric layer; from the opposite side of the gallium arsenide block to the lower plate of the capacitor Engraving a second through hole, the second through hole is connected to the lower plate of the capacitor; engraving the back metal wiring part on the side of the gallium arsenide block opposite to the lower plate of the capacitor. An embodiment of the present invention provides a method for manufacturing a three-dimensional spiral inductor device. By processing the two sides of a gallium arsenide block separately, a three-dimensional spiral inductor can be formed and realized to improve its quality factor, thereby improving filter performance and meeting application requirements.

Description

technical field [0001] The invention relates to the technical field of passive devices, in particular to a method for manufacturing a three-dimensional spiral inductance device. Background technique [0002] A filter is a filter circuit composed of capacitors, inductors and resistors. The filter can effectively filter the frequency point of a specific frequency in the power line or frequencies other than this frequency point to obtain a power signal of a specific frequency or eliminate a power signal of a specific frequency. [0003] The gallium arsenide on-chip radio frequency filter developed in the prior art uses planar spiral wiring to realize the inductance, which has the advantages of simple process and small area. However, with the further increase in frequency and the requirements of high-performance passive devices, the quality parameters of this type of inductor cannot achieve greater breakthroughs, and its loss cannot be reduced, making this type of inductor unab...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/522
CPCH01L23/5223H01L21/76847H01L21/76879
Inventor 陈立均代文亮李书萍
Owner XWAVE TECH (SHANGHAI) CO LTD
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