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Thermionic photoelectric detector based on 8-hydroxyquinoline aluminum/metal heterojunction

A hydroxyquinoline aluminum, photodetector technology, applied in the direction of electric solid device, semiconductor/solid state device manufacturing, circuits, etc., can solve problems such as unfavorable device photodetection, and achieve the effects of low cost, improved device performance, and high performance

Active Publication Date: 2020-02-11
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional organic semiconductor has a wide energy band, which is not conducive to the photodetection of devices in the near-infrared / infrared band.

Method used

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  • Thermionic photoelectric detector based on 8-hydroxyquinoline aluminum/metal heterojunction
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  • Thermionic photoelectric detector based on 8-hydroxyquinoline aluminum/metal heterojunction

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Embodiment Construction

[0015] The materials used in the present invention are: high-purity aluminum wire (Al), high-purity silver grain (Ag), 8-hydroxyquinoline aluminum (Alq 3 ), Diao brand detergent (composed of demineralized water, surfactant, vitamin E ester, lemon essence), deionized water (H 2 O), acetone (CH 3 COCH 3 ), isopropanol (C 3 h 8 OH). Its combined dosage is as follows:

[0016] Al: 2000mg

[0017] Ag: 1000 mg

[0018] Alq 3 : 200 mg

[0019] Acetone: 250 ml

[0020] Deionized water: 2000 ml

[0021] Isopropyl alcohol: 300 ml

[0022] Dish soap: 2±0.5ml

[0023] Conductive glass (indium tin oxide ITO): 25 mmol / L×25 mmol / L×1 mmol / L

[0024] The organic photodetector device of the present invention has a four-layer structure, which are respectively an anode layer, an organic semiconductor layer, a silver nanoparticle layer, and a cathode layer, and the anode layer is an ITO transparent electrode prepared on a glass substrate as a base layer, an anode layer Above is the o...

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Abstract

The invention relates to the field of photoelectric detector manufacturing and relates to a thermionic photoelectric detector based on an 8-hydroxyquinoline aluminum / metal heterojunction. The detectoris composed of an anode layer, an organic semiconductor layer, a silver nanoparticle layer and a cathode layer, wherein the anode layer is indium tin oxide ITO, the silver nanoparticle layer and thecathode layer form a metal composite electrode layer, and the organic semiconductor layer and the metal composite electrode layer form a Schottky junction. The invention further relates to a preparation method of the thermionic photoelectric detector based on the 8-hydroxyquinoline aluminum / metal heterojunction. The detector is advantaged in that the dark current of the photoelectric detector designed is kept at dozens of picoamperes under the condition of forward bias, and the bright current is in an on state.

Description

technical field [0001] The invention relates to the field of photodetector production, in particular to a thermal electron photodetector based on 8-hydroxyquinoline aluminum / metal heterojunction and a production method thereof. Background technique [0002] With the development of the image sensor and communication industry, there is an increasing demand for flexible, low-cost, and high-response photodetectors. Compared with inorganic semiconductors, organic semiconductors have many advantages such as flexibility, rich variety, adjustable band gap, and low price. However, traditional organic semiconductors have a wide energy band, which is not conducive to the photodetection of devices in the near-infrared / infrared band. In recent years, surface plasmons (SPPs) have attracted great attention due to their ability to manipulate light-matter interactions, photon absorption, thermal emission, wavelength, and energy conversion. Among them, the hot electrons generated by the dec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K30/451H10K30/81Y02E10/549
Inventor 李国辉赵成杰崔艳霞翟爱平梁强兵王文艳张叶冀婷郝玉英
Owner TAIYUAN UNIV OF TECH
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