Graphene preparation method based on water treatment auxiliary mechanism
A graphene and pretreatment technology, applied in the field of graphene, can solve the problems of unmatched graphene quality, graphene damage, complicated transfer process, etc., and achieve good application prospects
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[0030] refer to figure 1 , which representatively shows a schematic process flow diagram of a graphene preparation method according to an embodiment of the present disclosure. The method mainly includes: providing a substrate, the substrate is placed in a reaction chamber; annealing pretreatment is performed on the substrate; a carbon source is introduced, and graphene is grown by chemical vapor deposition reaction on the annealing pretreatment substrate; wherein, the annealing pretreatment It also includes introducing water vapor into the reaction chamber to etch the substrate surface, and graphene grows on the etched substrate surface. The preparation method of the graphene glass proposed in the present disclosure will be described in detail below with reference to the above-mentioned drawings. The preparation method of graphene proposed in the present disclosure is illustrated by taking an application to an insulating substrate as an example. Those skilled in the art can ...
Embodiment 1
[0047] (1) Cleaning of sapphire wafer: Clean the C-side sapphire wafer (manufacturer: Yuanliang Technology Co., Ltd., size: 4 inches in diameter) with ultrapure water, isopropanol, and acetone for 5 minutes, and use nitrogen gas after cleaning Blow dry, wherein the ultrasonic power is 90W.
[0048] (2) Sapphire wafer pretreatment: put the clean sapphire wafer substrate obtained in step (1) into the APCVD cavity, and put the first inert gas Ar and the second H 2 The gas flow meters were set to 600 sccm and 50 sccm respectively for scrubbing. After gas scrubbing, turn on the third carrier gas Ar gas flow meter connected to the water tank, set the gas flow rate to 300 sccm, water vapor will flow into the reaction chamber with the carrier gas Ar, and raise the temperature of the furnace to 1020°C, then During the process, the flow rates of the three gases were kept constant. After the furnace temperature rises to 1050°C, it is stabilized for 15 minutes, and the pretreatment of t...
Embodiment 2
[0052] Graphene was prepared by the method of Example 1, except that a quartz wafer was used instead of a C-plane sapphire wafer as a substrate. Figure 5 The Raman spectrogram of the graphene quartz wafer of this embodiment 2 is shown, from Figure 5 It can be seen that the grown graphene is of high quality.
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