Method for quickly identifying pattern included angle of monocrystalline silicon wafer

Abstract

The invention discloses a method for quickly identifying the pattern included angle of a monocrystalline silicon wafer. The method comprises the following steps: arranging two equal-step-pitch one-dimensional array type identification scales (5) at a certain distance in the vertical direction of an alignment line (4) of a photolithography mask (1); transferring the scales (5) on the photolithography mask (1) to the two ends of a main reference side (3) of a silicon wafer (2); observing and reading scale distances (h1, h2) formed by the identification scales (5) and the main reference side (3)of the silicon wafer (2); and performing calculation to obtain the pattern included angle of the monocrystalline silicon wafer. According to the method, the identification scales are arranged on the photolithography mask, the identification scales are transferred to the silicon wafer by adopting a photolithography technique, and quantitative identification of the included angle can be directly carried out under a microscope. The method is simple, effective, high in identification precision and suitable for batch tape-out manufacturing.

Description

technical field [0001] The invention belongs to the technical field of micro-electromechanical technology, and in particular relates to a method for quickly identifying the included angle of a single-crystal silicon wafer pattern. Background technique [0002] The image transposition in the processing flow of the device in the microelectromechanical system (MEMS) is realized by the photolithography process. Photolithography refers to the selective optical radiation and exposure of the photoresist on the medium by using the photoresist plate with a designed pattern, so that the photoresist is patterned and crosslinked, and then the uncrosslinked photoresist is removed by development. That is, the transposition of the design pattern to the pattern on the single crystal silicon wafer is completed. In this process, the alignment of the pattern and the monocrystalline silicon wafer is very important, which directly affects the control of critical dimensions, especially the first...

AI Technical Summary

Problems solved by technology

Wafer die alignment generally uses the alignment lines on the photolithography plate to align with the main reference edge of the wafer, and the alignment angle measurement is generally measured by special equipment such as a measuring microscope or image measuring instrument, which is cumbersome to measure , longer working hours, lower efficiency in batch production

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