Method for preparing antimony sulfide-based thin film solar cell by surface passivation
A solar cell, antimony sulfide-based technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as affecting device efficiency, and achieve the effects of inhibiting recombination, inhibiting battery interface defects, and low energy consumption
Active Publication Date: 2020-02-28
NORTHWESTERN POLYTECHNICAL UNIV
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[0004] In order to overcome the defect existing in the prior art that it is easy to form defects at the device interface and affect the efficiency of the device, the present invention proposes a method for preparing antimony sulfide-based thin film solar cells by surface passivation
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[0044] The invention relates to a method for preparing antimony sulfide-based thin film solar cells by surface passivation.
[0045] The structure of the antimony sulfide-based thin film solar cell is as follows figure 2 As shown, the transparent FTO conductive glass is used as the substrate, and the surface of the substrate is successively composed of an electron transport layer, a light absorbing layer, a passivation layer, a hole transport layer and an electrode.
[0046] The impedance of the FTO conductive glass is 10~15Ω / m 2 The electron transport layer is titanium dioxide with a thickness of 30-40nm; the light-absorbing layer is antimony sulfide with a thickness of 150-160nm; the passivation layer is antimony trichloride inorganic salt with a thickness of 1-2nm ; The hole transport layer is Spiro-OMeTAD, and its thickness is 110-130nm; The thickness of the gold electrode is 90-120nm.
[0047] The present invention will specifically illustrate the technical solution of ...
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Abstract
The invention discloses a method for preparing an antimony sulfide-based thin film solar cell by surface passivation. An antimony trichloride inorganic salt is introduced and applied to the post-treatment of an antimony sulfide thin film to achieve a purpose of suppressing the interface defects of the cell. The method effectively passivates the defect state on the surface of the antimony sulfide thin film, inhibits carrier recombination, and allows holes to penetrate to a hole transport layer while blocking electrons. Further, the passivation treatment method has low energy consumption and short time, and helps to further improve the energy conversion efficiency of the antimony sulfide-based thin film solar cell. The method forms a antimony trichloride inorganic salt passivation layer on the surface of antimony sulfide thin film, passivates the defects on the surface of antimony sulfide, inhibits carrier recombination, improves carrier transport, and significantly increases the open-circuit voltage, the short-circuit current density, the fill factor and the energy conversion efficiency of the antimony sulfide-based thin film solar cell.
Description
technical field [0001] The invention relates to the field of solar cell devices, in particular to a method for preparing a surface passivated antimony sulfide-based thin film solar cell. Background technique [0002] With the increasing shortage of resources, people pay more and more attention to energy research. Solar energy is a promising carbon-free energy source that can be used to sustain our lives. Unfortunately, so far, only a small fraction of the energy has been harvested with solar cells, mainly because of the high cost and environmental pollution issues involved in the solar cell fabrication process. Therefore, finding low-cost, environmentally friendly, efficient and stable solar cell materials has become the primary goal of solar cell research. In this regard, metal sulfide solar cells such as copper zinc sulfur selenide, copper indium gallium selenide, cadmium telluride, antimony selenide, and antimony sulfide have played an important role in solar applicatio...
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IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/00H10K30/353H10K2102/00Y02E10/549
Inventor 李炫华韩剑曹琦
Owner NORTHWESTERN POLYTECHNICAL UNIV