Preparation device and application of silicon carbide single crystal

A technology of silicon carbide single crystal and preparation device, which is applied in the directions of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems that the radial temperature cannot be detected in real time and the quality of the silicon carbide single crystal is high, and reduce the excessive internal stress. Large, small radial temperature gradient, uniform heating effect

Active Publication Date: 2020-03-24
SICC CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the above problems, a silicon carbide single crystal preparation device and its application are provided. The charging barrel of the preparation device is accurately and stably positioned at the center of the crucible as a heating element during the process of rotating and lifting to obtain high-quality silicon carbide single crystal; the use method of the silicon carbide single cry

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  • Preparation device and application of silicon carbide single crystal
  • Preparation device and application of silicon carbide single crystal
  • Preparation device and application of silicon carbide single crystal

Examples

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[0120] The method for preparing silicon carbide single crystal using any of the above-mentioned preparation devices includes the following steps:

[0121] 1) Assembly stage: After placing the raw materials in the charging bucket and fixing the seed crystal on the crucible lid, placing the charging bucket in the rotating lifting unit in the crucible and rotating it with the upper crucible to assemble the heating unit and heat preservation structure;

[0122] 2) Heating stage: control the temperature of the top surface of the raw material to be 2200-2800K, the temperature of the top cover of the crucible is 1800-2000K, and the absolute pressure of the inert gas in the crucible is 0.6×10 5 ~1.2×10 5 Pa, the inert gas flow rate is 50-500mL / min, and the upward rotation speed of the charging bucket relative to the upper crucible is 0.2-2mm / h, kept at least 6h;

[0123] 3) Crystal growth stage: control the surface center temperature T1 of the crucible cover to 1800-2400K, the top surface tem...

Example Embodiment

[0126] Example 1 Silicon carbide single crystal 1#

[0127] Use reference figure 1 The method for preparing silicon carbide single crystal 1# of the device for preparing silicon carbide long-crystal single crystals includes the following steps:

[0128] 1) Assembly stage: After placing the raw materials in the charging barrel and fixing the seed crystals on the crucible lid, place the charging barrel in the rotating lifting unit in the crucible and screwing it with the upper crucible to assemble the heating unit and heat preservation structure;

[0129] 2) Heating stage: control the temperature of the top surface of the raw material to 2400K, the temperature of the vapor transmission zone to 1900K, and the absolute pressure of the inert gas in the crucible to 0.8×10 5 Pa, the inert gas flow rate is 50-500mL / min, the speed of the charging barrel relative to the upper crucible is 0.2mm / h, and it is maintained for 10h;

[0130] 3) Crystal growth stage: control the surface center temperatu...

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Abstract

The invention discloses a preparation device and application of a silicon carbide single crystal, and belongs to the field of preparation of single crystals. The preparation device of the silicon carbide single crystal comprises a crucible, a charging basket and a rotary lifting unit, the crucible comprises an upper crucible and a lower crucible; wherein the charging bucket comprises a bucket bodyand an opening part, the bucket body is arranged in the lower crucible, the opening part is rotatably connected with the upper crucible, and the charging bucket and the upper crucible form a growth cavity for preparing the silicon carbide single crystal by a physical vapor transport method; an isolation cavity is formed between the charging bucket and the lower crucible; the rotary lifting unit drives the charging bucket to rotate and lift relative to seed crystals. According to the preparation device, the charging bucket is accurately and stably located in the center of the crucible servingas a heating body in the rotary lifting process, the interior of the charging bucket is heated evenly due to the consistent temperature of the sections of the charging bucket in all directions, then the defects that carbon inclusions are generated in the prepared silicon carbide single crystal and the like are overcome, and the quality of the prepared silicon carbide single crystal is improved.

Description

technical field [0001] The application relates to a silicon carbide single crystal preparation device and its application, belonging to the field of single crystal preparation. Background technique [0002] Silicon carbide is one of the third-generation wide-bandgap semiconductor materials after silicon and gallium arsenide. Widely used in power electronics, radio frequency devices, optoelectronic devices and other fields. High-quality crystals are the cornerstone of the development of semiconductor and information industries, and their preparation level restricts the preparation and performance of downstream devices. Although physical meteorological transport (PVT) growth of silicon carbide crystals has made great progress in recent years, the stability of the grown crystals still needs further study. For example, heat preservation and crucible loss lead to a decrease in the number of uses and fluctuations in the stability of the crystal growth. And the expansion of sili...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/002C30B29/36
Inventor 方帅高超高宇晗王路平王宗玉张九阳潘亚妮宁秀秀李霞舒天宇许晓林薛传艺
Owner SICC CO LTD
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