Structure for growth of aluminum nitride with high scandium doping concentration

A technology of aluminum nitride and aluminum nitride scandium, which is applied in the field of high scandium-doped aluminum nitride growth structure, can solve the problems of reducing the working performance of thin-film piezoelectric coefficient devices, poor film c-axis orientation, and high film stress, and achieves Good crystal growth quality, low stress, reduced lattice adaptation effect

Inactive Publication Date: 2020-03-27
CHONGQING UNIV
View PDF15 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The aluminum scandium nitride piezoelectric film with high scandium doping concentration prepared by reactive magnetron sputtering method as the core technology, due to the large amount of scandium element, will produce lattice distortion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure for growth of aluminum nitride with high scandium doping concentration
  • Structure for growth of aluminum nitride with high scandium doping concentration

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic concept of the present invention, and the following embodiments and the features in the embodiments can be combined with each other in the case of no conflict.

[0022] Wherein, the accompanying drawings are for illustrative purposes only, and represent only schematic diagrams, rather than physical drawings, and should...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a structure for growth of aluminum nitride with high scandium doping concentration, and belongs to the technical field of electromechanics. The structure sequentially comprises a silicon substrate, an adhesion layer, a lower electrode layer, an aluminum nitride seed layer, a low scandium-doped concentration aluminum scandium nitride seed layer and a high scandium-doped concentration aluminum scandium nitride piezoelectric layer from bottom to top. The high-scandium-doped-concentration aluminum-scandium nitride piezoelectric film grown by taking the structure as a corepreparation technology has good crystal growth quality, relatively low stress and relatively high piezoelectric coefficient, and a piezoelectric film device prepared on the basis has good performance;moreover, multiple seed layers are adopted to reduce interlayer lattice adaptation, improve the growth quality of the aluminum-scandium nitride crystal and reduce the stress of the film.

Description

technical field [0001] The invention belongs to the field of electromechanical technology, and relates to a structure for growing aluminum nitride with high scandium-doped concentration. Background technique [0002] Scandium-doped aluminum nitride piezoelectric film has the characteristics of high sound velocity, high temperature resistance, stable performance, and compatibility with CMOS technology. It is the known piezoelectric film material with the highest piezoelectric coefficient and has attracted widespread attention at home and abroad. MEMS devices based on scandium-doped aluminum nitride piezoelectric thin films have been widely used in the fields of sensors, resonators and energy harvesters. [0003] The aluminum scandium nitride piezoelectric film with high scandium doping concentration prepared by reactive magnetron sputtering method as the core technology, due to the large amount of scandium element, will produce lattice distortion compared with pure aluminum n...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L41/047H01L41/18H01L41/29H01L41/39B81C1/00C23C14/35C23C14/16C23C14/06C23C14/18C23C14/58
CPCB81C1/00349C23C14/35C23C14/3485C23C14/0036C23C14/165C23C14/0617C23C14/185C23C14/5833B81C2201/0181H10N30/87H10N30/85H10N30/06H10N30/093
Inventor 尚正国陈宇昕
Owner CHONGQING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap