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Preparation method and application of sub-10 nanometer gap structure

A technology of nano-gap and electron beam, applied in the field of nano-processing

Inactive Publication Date: 2020-04-10
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation method provided by the present invention can overcome the problem of underexposure when the apex angle of the designed apex structure is less than 40°, and successfully prepares a sub-10 nanometer gap structure

Method used

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  • Preparation method and application of sub-10 nanometer gap structure
  • Preparation method and application of sub-10 nanometer gap structure
  • Preparation method and application of sub-10 nanometer gap structure

Examples

Experimental program
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Effect test

Embodiment 1

[0054] A sub-10 nanometer gap structure, the preparation method is as follows:

[0055] (1) Use GDSII software to design such as figure 1 The overlapping pattern of the top structure is shown, wherein the angle of the top is 5°, and the overlapping length is 200nm.

[0056] (2) Soak the silicon wafer in acetone, isopropanol and deionized water and ultrasonically clean it, blow it dry with nitrogen, then spin-coat a layer of PMMA glue with a thickness of 80nm, and bake it in an oven at a temperature of 180°C for a period of 5 minutes.

[0057] (3) Electron beam exposure is carried out on the substrate, the electron beam acceleration voltage used is 100kV, the beam current is 100pA, the exposure step length is 1nm, and the exposure dose is 700μC / cm 2 .

[0058] (4) Develop in a mixture of methyl isobutyl pentanone and isopropanol (1:3) for 30 s, fix in isopropanol for 30 s, and blow dry gently with nitrogen to obtain a sub-10 nanometer gap structure mask .

Embodiment 2

[0060] A sub-10 nanometer gap structure, the preparation method is as follows:

[0061] (1) Use GDSII software to design such as figure 2 The overlapping pattern of the top structure is shown, wherein the apex angle is 10°, and the overlapping length is 40nm.

[0062] (2) Soak the silicon wafer in acetone, isopropanol and deionized water and ultrasonically clean it, blow it dry with nitrogen, then spin-coat a layer of PMMA glue with a thickness of 80nm, and bake it in an oven at a temperature of 180°C for a period of 5 minutes.

[0063] (3) Electron beam exposure is carried out on the substrate, the electron beam acceleration voltage used is 100kV, the beam current is 100pA, the exposure step length is 1nm, and the exposure dose is 700μC / cm 2 ;

[0064] (4) Develop in a mixture of methyl isobutyl pentanone and isopropanol (1:3) for 30 s, fix in isopropanol for 30 s, and blow dry gently with nitrogen to obtain a sub-10 nanometer gap structure mask .

Embodiment 3

[0066] A sub-10 nanometer gap structure, the preparation method is as follows:

[0067] (1) Use GDSII software to design such as image 3 The overlapping pattern of the top-to-top structure is shown, wherein the apex angle is 30°, and the overlapping length is 16nm.

[0068] (2) Soak the silicon wafer in acetone, isopropanol and deionized water and ultrasonically clean it, blow it dry with nitrogen, then spin-coat a layer of PMMA glue with a thickness of 80nm, and bake it in an oven at a temperature of 180°C for a period of 5 minutes.

[0069] (3) Electron beam exposure is carried out on the substrate, the electron beam acceleration voltage used is 100kV, the beam current is 100pA, the exposure step length is 1nm, and the exposure dose is 700μC / cm 2 ;

[0070] (4) Develop in a mixture of methyl isobutyl pentanone and isopropanol (1:3) for 30 s, fix in isopropanol for 30 s, and blow dry gently with nitrogen to obtain a sub-10 nanometer gap structure mask .

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Abstract

The invention provides a preparation method and application of a sub-10-nanometer gap structure. The preparation method comprises the following steps of (1) designing an overlapping pattern of an opposite vertex structure as a mask pattern; and (2) exposing an electron beam resist by using an electron beam according to a pattern designed in the step (1), and developing and fixing to obtain the sub-10-nanometer gap structure. According to the preparation method provided by the invention, the problem of underexposure when a vertex angle of the designed opposite vertex structure is smaller than 40 degrees can be solved, and the sub-10 nanometer gap structure is successfully prepared.

Description

technical field [0001] The invention belongs to the technical field of nano-processing, and relates to a preparation method and application of a sub-10 nanometer gap structure. Background technique [0002] Electrons have particle and wave properties at the same time. In nanoscale components, the electron transmission process will interfere like light waves. Not only the energy dissipation is very small, but also the electronic phase information can be preserved and transmitted. It is an ideal information processing component. Therefore, nanoelectronic devices, that is, phase electronic devices, are the inevitable result of further miniaturization of microelectronic devices. In the manufacture of nanoelectronic devices, the manufacture of nano-counter electrodes with small size, good conductivity, and nano-scale gaps is a key and difficult point. [0003] Two-dimensional metal or other material structures with a characteristic size of sub-10 nanometers can highly localize t...

Claims

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Application Information

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IPC IPC(8): H01L21/027H01L21/28G03F1/36G03F7/20B82Y40/00
CPCH01L21/0277H01L21/28G03F1/36G03F7/70441B82Y40/00
Inventor 胡海峰褚卫国董凤良闫兰琴陈佩佩
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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