a kind of sio 2 And the preparation method of doped polysilicon lamination passivation film

Abstract

The invention discloses a SiO 2 and a method for preparing a doped polysilicon laminated passivation film, comprising the following steps: a chain continuous transmission system, the silicon wafer is loaded onto a carrier plate on an automatic loading table, and the carrier plate with the silicon wafer is evacuated and heated through a loading chamber; Transported to the PECVD process chamber for SiH through the transport mechanism 4 and oxygen-containing gases (O 2 / N 2 O) Generate Si0 2 Thin film; then sent to the PVD process chamber through the transition chamber to plate doped amorphous silicon film by ion sputtering method; then enter the atmosphere through the unloading chamber and unload on the unloading table; the empty board is returned to the loading table in the atmosphere to continue next cycle. The invention utilizes chain transport combined with PECVD growth of SiO 2 The two-in-one coating solution of PVD growth doped polysilicon, continuous operation production has the advantages of high production capacity, less production process, no cross pollution and environmental pollution between processes, low equipment investment cost and low production energy consumption.

Description

technical field [0001] The invention relates to the technical field of high-efficiency solar cell preparation, in particular to a method for preparing a doped amorphous silicon silicon oxide stacked passivation cell, especially SiO in the cell 2 And the preparation method of doped polysilicon laminated passivation film. Background technique [0002] At present, the battery technology is developing rapidly, especially the high-efficiency battery doped with amorphous silicon oxide layer passivation (POLO), which overcomes the shortcomings of the current electrical contact of the PERC battery, and is the next-generation mass production technology to improve the conversion efficiency of the battery in the future. The market The prospects are huge. A typical representative is Topcon, which is a passivated cell with phosphorous-doped polysilicon and silicon oxide on the back of an N-type silicon wafer. The core of Topcon technology is to prepare extremely thin SiO 2 Thin layer ...

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Problems solved by technology

[0004] 1) SiO2 2 Preparation: It is realized by thermal oxidation using tubular equipment, heated to a high temperature of about 570°C, and it takes 30-60min to grow SiO with a thickness of about 2nm 2 Thin film, which has the disadvantages of high temperature, high energy consumption, and long process time;

[0005] 2) Preparation of polysilicon: using tubular LPCVD equipment through coating, heating to a high temperature of about 600°C, it takes about 60 minutes to grow polysilicon with a thickness of about 130nm, which has the disadvantages of high temperature, high energy consumption, and long process time;

[0006] 3) Doping: Using ion implantation equipment to realize the preparation of polysilicon doped layer, the equipment cost is high, the process is cumbersome and uneconomical

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