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Composite heat-dissipation material for semiconductor and preparation method thereof

A composite heat dissipation material and semiconductor technology, applied in the field of thermal conductive materials, can solve problems such as failure of electronic components, affecting the normal operation of components, and prominent heat dissipation problems, achieving high thermal conductivity, solving heat accumulation, and enriching the effect of pore structure.

Inactive Publication Date: 2020-04-21
SHENZHEN INST OF WIDE BANDGAP SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, both the LED heat dissipation substrate and the heat dissipation fins of the lamp housing are solid materials, and there is an air gap between the contact surfaces. With the development of LEDs in the direction of high light intensity and high power, the problem of heat dissipation has become increasingly prominent
[0003] In addition to LEDs, electronic devices, especially high-power and miniaturized electronic components, will generate a lot of heat during the operation process. If the heat dissipation is not timely, the excessive heat accumulation will affect the normal operation of the components. Failure of electronic components and even lead to accidents

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] In parts by weight, weigh 95 parts of resin powder, 12 parts of hexagonal boron nitride, 15 parts of hollow alumina, 18 parts of nano-activated carbon powder, 10 parts of dispersant, 12 parts of adhesive and 13 parts of expanded graphite. Nano-activated carbon powder and expanded graphite are ultrasonically dispersed, fully stirred and mixed, and then mixed with other materials in a high-speed mixer, then sent to a twin-screw extruder for melt extrusion, and the extruded material is cooled and pelletized. After granulation, a composite heat dissipation material for semiconductors is obtained. According to the method specified in ASTM D5470, the thermal conductivity of the obtained material is 2.73W / (m·K).

[0019] Wherein, the nano activated carbon powder is obtained by mixing nano metal nickel powder and nano activated carbon in distilled water according to the mass ratio of 1:1.5, stirring thoroughly after ultrasonic dispersion, then filtering, washing and drying; the ...

Embodiment 2

[0021] In parts by weight, weigh 90 parts of resin powder, 8 parts of hexagonal boron nitride, 13 parts of hollow alumina, 15 parts of nano-activated carbon powder, 7 parts of dispersant, 8 parts of adhesive and 10 parts of expanded graphite. Nano-activated carbon powder and expanded graphite are ultrasonically dispersed, fully stirred and mixed, and then mixed with other materials in a high-speed mixer, then sent to a twin-screw extruder for melt extrusion, and the extruded material is cooled and pelletized. After granulation, a composite heat dissipation material for semiconductors is obtained. According to the method specified in ASTM D5470, the thermal conductivity of the obtained material is 2.65W / (m·K).

[0022] Wherein, the nano-activated carbon powder is prepared by mixing nano-metallic nickel powder and nano-activated carbon in distilled water according to the mass ratio of 1:1, fully stirring after ultrasonic dispersion, and then filtering, washing and drying; the res...

Embodiment 3

[0024] In parts by weight, weigh 100 parts of resin powder, 15 parts of hexagonal boron nitride, 17 parts of hollow alumina, 20 parts of nano-activated carbon powder, 13 parts of dispersant, 15 parts of adhesive and 15 parts of expanded graphite. Nano-activated carbon powder and expanded graphite are ultrasonically dispersed, fully stirred and mixed, and then mixed with other materials in a high-speed mixer, then sent to a twin-screw extruder for melt extrusion, and the extruded material is cooled and pelletized. After granulation, a composite heat dissipation material for semiconductors is obtained. According to the method specified in ASTM D5470, the thermal conductivity of the obtained material is 2.71W / (m·K).

[0025] Wherein, the nano-activated carbon powder is obtained by mixing nano-metal nickel powder and nano-activated carbon in distilled water according to the mass ratio of 1:2, fully stirring after ultrasonic dispersion, and then filtering, washing and drying; the re...

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PUM

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Abstract

The invention belongs to the field of heat-conduction materials, and discloses a composite heat-dissipation material for a semiconductor and a preparation method thereof. The composite heat-dissipation material for the semiconductor comprises the following components in parts by weight: 90 to 100 parts of resin powder, 8 to 15 parts of hexagonal boron nitride, 13 to 17 parts of hollow aluminum oxide, 15 to 20 parts of nanometer activated carbon powder, 7 to 13 parts of a dispersing agent, 8 to 15 parts of an adhesive and 10 to 15 parts of expanded graphite. In the composite heat-dissipation material provided by the invention, the expanded graphite has rich pore structures and high thermal conductivity; pores of the expanded graphite can be fully filled with the nanometer activated carbon powder doped with the nanometer metal powder; the expanded graphite, the hollow aluminum oxide, the hexagonal boron nitride with high electrical insulation performance and the resin are applied to a semiconductor electronic device with high heat flux density to form an insulated high-heat-dissipation surface, so a heat-conduction medium with high heat conductivity is provided for the electronic device, and the problem of heat accumulation of an electronic device module can be solved.

Description

technical field [0001] The invention relates to the technical field of heat conducting materials, in particular to a composite heat dissipation material for semiconductors and a preparation method thereof. Background technique [0002] LED is a semiconductor light-emitting diode built on semiconductor transistors. With the development of technology and the extension of demand, the luminous flux and light efficiency of LEDs have been continuously improved. Power LEDs used in groups constitute high-power LED lighting sources and have been widely used in daily life. and in industrial production. In the actual environment, the LED chip modules used in groups are arranged in a certain form of array and welded on a special substrate. When the LED is working, heat will be generated, and the heat will be conducted to the heat dissipation fins of the lamp housing through the substrate to achieve the purpose of heat dissipation . However, both the LED heat dissipation substrate and ...

Claims

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Application Information

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IPC IPC(8): C08L25/06C08L71/12C08L77/00C08L23/08C08L29/14C08K13/04C08K7/24C08K3/38C08K3/08C09K5/14
CPCC08L25/06C08L71/12C08L77/00C09K5/14C08L2205/035C08L2203/20C08K2201/014C08K2201/011C08K2003/385C08K2201/003C08K2003/0862C08L23/0853C08L29/14C08K13/04C08K7/24C08K3/38C08K3/08
Inventor 曲作鹏叶怀宇田欣利张国旗
Owner SHENZHEN INST OF WIDE BANDGAP SEMICON