Apparatus and method for crystal growth

Abstract

The invention provides a crystal growth device and method. The device comprises an upper crucible which is used for the growth of crystals, wherein the bottom of the upper crucible is provided with aplurality of upper sieve pores, a lower crucible which is located below the upper crucible, wherein the bottom of the lower crucible is closed, a plurality of lower sieve holes are formed in the top of the lower crucible and the lower sieve holes and the upper sieve holes are formed in a staggered mode, and a lifting device which comprises a first lifting device for controlling the upper crucibleto move and a second lifting device for controlling the lower crucible to move. The device disclosed by the invention can ensure uniform and thorough carbonization of the powder, and also can collectthe carbonized powder at any time, so that the defects of inclusion, microtubules, dislocation and the like are greatly reduced. According to the method disclosed by the invention, the upper crucibleand the lower crucible are jointed and butted by controlling the lifting of the upper crucible, so that the powder for crystal growth is uniformly and thoroughly carbonized, and crystal growth defectsare few; and the upper crucible and the lower crucible are separated by controlling the lifting of the lower crucible, and the lower crucible collects carbonized powder, so that the upper sieve poresand the lower sieve pores are opened and closed at regular time, and the growth of high-quality crystals is realized.

Description

technical field [0001] The invention relates to a crystal growth device and method, belonging to the technical field of crystal growth. Background technique [0002] Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, extremely high carrier mobility, and high chemical stability, and can be made into high-frequency semiconductors that work under high temperature and strong radiation conditions. , High-power electronic devices and optoelectronic devices have great application value in the fields of national defense, high technology, industrial production, power supply, and transformation, and are regarded as the third-generation wide-bandgap semiconductor materials with great development prospects. [0003] The growth process of silicon carbide single crystal grown by PVT method is carried out in a closed graphite crucible, so the growth environment at high temperature is in a carbon-ri...

AI Technical Summary

Problems solved by technology

However, this patent can only prevent the tiny carbon particles on the side wall of the crucible from being transported to the surface of the seed crystal, and there is also a large amount of carbonized powder at the bottom of the crucible, which cannot prevent the tiny carbon particles from being carbonized on the bottom of the crucible from being transported to the seed crystal. surface, and the temperature difference of the patented SiC powder in different positions in the device is very large, and the carbonization is uneven, resulting in uneven composition of the gas phase components, which will also affect the quality of the grown crystal

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